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    002210B Search Results

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    002210B Price and Stock

    TE Connectivity

    TE Connectivity TXR41AB00-2210BI

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    TE Connectivity TXR54AB00-2210BI

    TXR54AB00-2210BI
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    TE Connectivity TXR40AC00-2210BI

    TXR40AC00-2210BI
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    TE Connectivity TXR54AC00-2210BI

    TXR54AC00-2210BI
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    TE Connectivity TXR40AZ00-2210BI

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    Master Electronics TXR40AZ00-2210BI
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    002210B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G055175

    Abstract: Z86C9320PEC HP30C DD2S173 86c91
    Contextual Info: ZIL06 INC 4bE D • =^64043 DD2S173 S P r e l im in a r y P r o d u c t S p e c if ic a t io n T -W -H -u tb Z86C93 CMOS Z8 MULT/DlV MICROCONTROLLER FEATURES ■ Com plete m icrocontroller, 24 I/O lines, and up to 64 Kbytes of addressable external space each tor program


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    ZIL06 DD2S173 Z86C93 16-bit 32-bit 256-byte G055175 Z86C9320PEC HP30C 86c91 PDF

    Contextual Info: HFD3866 Analog Output Receiver FIBER210.TIF DESCRIPTION OUTLINE DIMENSIONS in inches mm The HFD3866 is a 35 MHz fiber optic analog receiver with an on-chip voltage regulator to assure improved noise immunity. The linear output voltage swing is inverted from the optical input and is proportional to the


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    HFD3866 FIBER210 HFD3866 HFD3026 FIBER005 FIBER053 FIBER060 PDF

    Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M65846FP SINGLE CHIP SURROUND PROCESSOR DESCRIPTION This C M O S LSI is for producing surround effects with a built-in delay circuit and mixing amplifiers. T he device is suitable for adding surround effects to C D radio cassette players and miniature compo­


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    M65846FP 16-kbit PDF

    MG300Q1US11

    Abstract: GE-540 GE-54 221D
    Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG300Q1US11 GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .O^s Max. • Low saturation voltage: = 0 .5 n s (Max.)


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    MG300Q1US11 TDT72SD PW03960796 MG300Q1US11 GE-540 GE-54 221D PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - PidB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


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    S8836B 002210b S8836B 226mA PDF