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    002027B Search Results

    002027B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MD108

    Abstract: MD-108 MD10S N 5192 RC32DPM txal CRC-16 CRC-32 V150LA10A TI rf transmitter receiver loop antenna
    Contextual Info: RC32DPM RC32DPM Mobitex Wireless Modem Data Pump with V.32 bis Wireline Support Rockwell INTRODUCTION FEATURES The Rockwell RC32DPM modem data pump MDP provides the baseband signal processing needed to support the Mobitex wireless packet data system. The RC32DPM combines packetswitched data communication functionality with V.32 bis data


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    rc32dpmlearc32dpmpd68j/gpoo-d16468-pin+10md10811d73md-108md10sn 5192txalcrc-16crc-32v150la10a tirf transmitter receiver loop antenna PDF

    Contextual Info: M ic r o c h ip PIC16C6X 8-Bit CMOS Microcontrollers Devices included in this data sheet: PIC16C61 • PIC16C64A PIC16C62 • PIC16CR64 PIC16C62A • PIC16C65 PIC16CR62 • PIC16C65A PIC16C63 • PIC16CR65 PIC16CR63 • PIC16C66 PIC16C64 • PIC16C67 • Low-power, high-speed CMOS EPROM/ROM


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    pic16c6xpic16c61pic16c64apic16c62+6pic16cr64pic16c62apic16c65pic16cr62pic16c65apic16c63 PDF

    IRFSZ24

    Abstract: 250M IRFSZ20
    Contextual Info: N-CHANNEL POWER MOSFETS IRFSZ24/20 FEATURES • Lower R d s o n | • Improved inductive rugge dn ess • Fast sw itching tim es • R u g g e d polysilicon gate cell structure • Low er input capacitance • Extended safe operating area • Im proved high temperature reliability


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    irfsz24/20irfsz24irfsz20o-220f+1250m PDF

    Contextual Info: O K I Semiconductor MSM51 V17160 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION TheMSM51V17160 is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17160 achieves high integration, high-speed operation, and low-power


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    msm51v17160576-word16-bit+3themsm51v17160msm51v1716042-pin PDF

    BUK427-500B

    Contextual Info: N AMER PHILIPS/DISCRETE 25E D bbSBTEl 0050275 7 PowerMOS transistor BUK427-500A BUK427-500B T - 39-11 GENERAL DESCRIPTION SYMBOL ccn > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in


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    buk427-500abuk427-500bbuk427-500a+1-500b PDF

    qml-38535

    Abstract: HCS245
    Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA A PPROVED REV SHEET REV SHEET 15 REV STATUS u r oncc i o REV SHEET PMIC N/A STANDARD M ICRO CIRC UIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 1 2 3 4 5


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    mil-hdbk-103t0d47q00e0et0047d+2qml-38535hcs245 PDF