001SQ Search Results

Contextual Info: N AMER PHILIPS/DISCRETE ObE T> • t.b53^31 001SQT3 T ■ P K .B 3 2 U U 1 U PKB32003U PKB32005U M A IN T E N A N C E T Y P E S for new design use PTB32001X, PTB32003X, PTB32005X T - 33 - $ T- 33-0*7 MICROWAVE POWER TRANSISTORS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.

Contextual Info: bT32flS2 001SQS3 ‘îflfl Num eric Display 1 Digit 25.4mm 1 . 0 ” Series Type No. Lighting Color LN 5110A LA M W • Red LN 5110A LK M W • R ed S ië S Terminal Connection Plb NO 2 Assignment Assignment Cathode e Anode e Cathode d Anode d 3 Ì4 13121110 9 8

viterbi algorithm

Contextual Info: ABRIDGED VERSION AI SSI 34P3500 w m PRML Read Channel with PR4, 8/9 ENDEC, FWR Servo s ifs k tn s A TDK G roup/Company Advance Information December 1995 DESCRIPTION FEATURES The SSI 34P3500 is a high performance BiCMOS read channel 1C that provides all of the functions needed to

Contextual Info: u f m TECHNOLOGY Softw are-Selectable M ultiprotocol Transceiver August 1996 F€ O TUR€S D C S C R IP T IO n • Software-Selectable Transceiver Supports: RS232, RS449. EIA-530, EIA-530-A, V.35, V.36, X.21 ■ NET1 and NET2 Compliant ■ Software-Selectable Cable Termination Using

Contextual Info: HD49429F PRELIMINARY SPECIFICATION HITACHI Preliminary Specification March 1998 Description HD49429F is a highly integrated MCNS compliant Upstream processor optimized for applications such as Cable Modems and Set-top boxes. It forms a complete and optimal solution with its companion

Contextual Info: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: HARRIS SEMICOND SECTOR IfaE D HARRIS • 4302271 001501b 7 ■ 82C89/883 T f 3 . ■ CMOS Bus Arbiter Juñe 1989 Pinouts Features 8 2 C 8 9 /8 8 3 CERAMIC DIP TOP VIEW. • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.

Contextual Info: D A TE SYM R E V I S I O N 10/22/98 - RECDRD ISSUED AUTH, DR, CK, NT DG 0, 4 1 1MAX, O, 125 , 211 MIN, HUILE DEPTH FDR , 04 0 PINC ±0, 00 1 0, 125 ±0, 00 6 0, 258REF, _ 0, 09 2 J~ REF, 0, 218REF, T 00, 031 REF, SPRING INSERT CAPTIVATED 0, 024±0, 0 0 3

Contextual Info: ENHANCED PIC16C5X M ic r o c h ip EPROM/ROM-Based 8-Bit CMOS Microcontroller Series Pin Diagram Devices Included in this Data Sheet PIC16C54A PDIP, SOIC, Windowed CERDIP PIC16CR54A PIC16CR54B 'O - RA2 - RA1 - RAO RA3 PIC16CR56 T0CK! PIC16CR57A MCLR/VPP

diode 351

Abstract: SIPMOS N-channel
Contextual Info: ÛÔD D • Ô535b05 OQISGSb ô HSIEfi SIEMENS AKTIENGESELLSCHAF 7 “" 3 ^ r' / 3 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Type BUZ 351 400 V 11,5 A 0,4 Q ’ OS on SIPMOS, N-channel, enhancement mode

38dec

Abstract: 34P3400
Contextual Info: SSI 34P3400 ¿ ilr n s y s te m 30 Mbit/s Read Channel w/Adaptive Threshold Qualifier s A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 34P3400 device is a high performance BiCMOS single chip read channel 1C that contains all

LA3240

Abstract: VR 100K la324 LA3226 LA3607 ic la3600 LA3600 LA3550M
Contextual Info: SANYO SEMICONDUCTOR CORP fe,3E D 7 tì tì 7 G 7 t j 0012041 SSb « T S A J y 'jy y y New Product Type No # Package LA316Û s ip -8 LA3161 s ip -8 LA3210 SlP-9 LA3220 DIP-14 LA3225T LA322BT SIP-10 SIP-10 LA360Û DIP-16 LA3605 DIP-20S M il Suitable 1 2cf'

Contextual Info: b3E • b EMTf iS? GD1 S G S7 M ITS U B IS H I DGTL 207 ■ M IT 3 MITSUBISHI BIPOLAR DIGITAL ICs M54538P LOGIC 7-UNIT 350mA TRANSISTOR ARRAY AND MOTOR DRIVER D E S C R IP T IO N The M54538P, 7-channel sink driver and a motor driver, is designed for use in a thermal printer.

din 3773

Abstract: DIODE S45 TP 1322 C67078-A3103-A2
Contextual Info: ÛÔD D • Ô535b05 OQISGSb ô H S IE fi SIEMENS A K TI EN GE SE LL SCH AF 7 “" 3 ^ r' / 3 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Type BUZ 351 400 V 11,5 A 0,4 Q ’ OS on SIPMOS, N-channel, enhancement mode