001737B Search Results

Contextual Info: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

ati exm 321

Abstract: sd 7401 xlxxxx DSP1610 TMs 1122 AB14 DSP1618 CXR 726 Microprocessor 100-BQFP aop 741
Contextual Info: AT&T Data Sheet May 1995 •= ? ■Microelectronics DSP1618 Digital Signal Processor 1 Features ■ Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at

1N4728A

Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A T-77-T3
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • ^53=131 0017373 3 ■ 1N4728A to 1N4761A VOLTAGE REGULATOR DIODES The series consits of 34 types with nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Fig. 1 DO-41 SOD66 . 0,81 1 max t Dimensions in mm >t-

ci 741

Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
Contextual Info: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance

headland 386

Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Contextual Info: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.

MSM51V16100

Abstract: 2M2H
Contextual Info: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.

Contextual Info: SSlflMbfl 00173t>b bQb Final Electrical Specifications LT1680 u i m TECHNOLOGY High Power DC/DC Step-Up Controller June 1997 KO TU IKS DCSCRIPTIOn • High Voltage: Operation Up to 60V Max ■ High Current: N-Channel Drive Handles Up to 10,000pF Gate Capacitance

H7057

Abstract: TI241 00003H d70f3008 p103 t020 D70F30 PD703008
Contextual Info: NEC USER'S MANUAL ¿¿PD703008 /iPD70F3008 /IPD703008Y ¿¿PD70F3008Y e NEC Corporation 1997 b427SSS DDTTQll bSfi Document No. U11969EJ1V0UM00 1st edition Date Published January 1997 N Printed in Japan ft Regional Information S om e information contained in this document may vary from country to country. Before using any N E C