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    Contextual Info: M ^ b a o s 0013i4flb 330 « H i m 2SK1666- HITACHI/Í OPT OE LECTRONICS blE ]> SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING • FEATURES • Low ON-Resistance • High Speed Switching • 4 V Gate Drive Device - Can be driven from 5V source • Suitable for Motor Drive, DC-DC Converter,


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    0013i4flb 2SK1666 2SK1665. Q0134Ã 2SK1666 PDF