0001ST Search Results

Contextual Info: 'S PERFORMANCE SEMICONDUCTOR 50E D m TObESi? 0001St.fi P33PCT139,139A, 139B m& vamgg HIGH-SPEED DUAL 1-0F-4 DECODER T - Ù x? ~ 2 \~ S ~ £ -' X r-

Contextual Info: nplComlinear iLJC orporation 12-Bit A/D Converters 15 to 30.72MSPS CLC935, 936, 937, & 938 APPLICATIONS: FEATURES: • • • • • • • Pin-Compatible Family • Wide Dynamic Range 82dB SFDR; Fjn = 400kHz 81 dB IMD; Fin = 3.5MHz & 3.7MHz 65dB SNR; Fin = 7MHz

Contextual Info: Cermetek CH179X HIGH SPEED MODEM and FAX FAMILY CH17991V.34bis -33,600bps CH1798 / V.34 -28,800bps CH17941V.32bis - 14,400bps Microelectronics, Inc. INTRODUCTION FEATURES The CH1799, CH1798 and CH1794 CH179X Family are industrial grade high speed modem modules capable of 33,600bps,

EDI9F81025C100BPC

Abstract: EDI9F81025C70BPC EDI9F81025C85BPC EDI9F81025LP70BPC
Contextual Info: WDI EDI9F81025C ELECTRONIC DESIGNS INC. . High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS, Module Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

WT3 SMD CODE

Abstract: WT3 SMD MARKING report on power line carrier communication S95 SMD smd marking KD CH179X 5v88 MARKING S95 CH1786 CH1794
Contextual Info: CH179X HIGH SPEED MODEM and FAX FAMILY CH1799 / V.34bis -33,600bps CH1798 / V.34 - 28,800bps CH1794 / V.32bis - 14,400bps C e r r r r e te k Microelectronics,. Inc. INTRODUCTION FEATURES Supports V.34bis, V.34 V.FC, V.32bis, V 32, V22bis V.22A/B. V.23, V.21. Bell 212A and 103

Ba 33 bco

Contextual Info: NN5216 4 0 5 / NN5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words

Contextual Info: ^EDI _ EDI8F8259C Electronic Designs Inc. Commercial Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 C h ic a g o M in ia t u r e 708-459-3400 Fax 708-459-2708 WHERE INNOVATION COMES TO LIGHT T -1 V 4 Su per B rite LED Lam ps D E S C R I P T I O N A N D F E A T U R E S These T-1 3/4 LED lamps, available in both diffused and non­

MH89760B

Abstract: MH89790B MT8920B MT8920BE MT8920BP MT8920BS MT8976 MT8979 4A63 VDD52
Contextual Info: ISO-CMOS ST-BUS FAMILY MT8920B ST-BUS Parallel Access Circuit Features • • • • • • • • ISSUE 7 High speed parallel access to the serial ST-BUS Parallel bus optimized for 68000 µP mode 1 Fast dual-port RAM access (mode 2) Access time: 120 nsec

Contextual Info: ^EDI EDI9F81025C ELECTRONIC DESIGNS INC." High Speed Eight Megabit SRAM Module 2x512Kx8 Static RAM CMOS Module , Features The EDI9F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a 2x512Kx8 bit CMOS Static Random Access Memory

chotherm

Contextual Info: n p lC o m lin e a r iL JC o r p o r a tio n 12-Bit A/D Converters 15 to 30.72MSPS CLC935, 936, 937, & 938 APPLICATIONS: FEATURES: • • • • • • • Pin-Compatible Family • Wide Dynamic Range 82dB SFDR; Fjn = 400kHz 81 dB IMD; Fin = 3.5MHz & 3.7MHz

Contextual Info: Illl = ^ i Illl 2N3209CSM SEME LAB HIGH SPEED, PNR SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.51 ±0.10 t (0.02 ± 0.004) H 0.31 (0.012)