000107TM2FXHD Search Results

FET MARKING QG

Abstract: FSS208 S208
Contextual Info: FSS208 N- Channel Silicon MOS FET DC-DC Converter TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage -30 VDSS Gate to Source Voltage ±20 VGSS Drain Current DC 10 ID

Contextual Info: FTS2015 N- Channel Silicon MOS FET Very High-Speed S/W Use TENTATIVE Features • Low ON-state resistance. • 2.5V drive. • Mount height 1.1mm. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current(Pulse)