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TE Connectivity RS5D-10 000-OHMS |
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TE Connectivity 35H-210-000-OR-900Battery Disconnector 35H-210-000-OR-900 MOQ Reduction |
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IDEC Corporation UWQN-20000-(ON-OFF)(ON-OFF) TW HD OPER |
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IDEC Corporation UWQN-10000-(ON-OFF)(ON-OFF) TW HD OPER |
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Kyocera AVX Components 008283031200000+- OLD- Bag (Alt: 008283031200000+) |
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008283031200000+- OLD | Bag | 1,000 | 1,000 |
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0000O Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: S C44820/S C44821/S C44822 Single Chip microCMOS Microcontrollers SIERRA SEMICONDUCTOR The SC44820 is pin and function com patible w ith the COP820C microcontroller manufactured by National Semiconductor Corpora tion. It is fabricated using double m etal, silicon gate, fully static |
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c44820/sc44821/sc4482228-pin+4 | |
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Contextual Info: LM 49150 LM49150 Mono Class D A udio Subsystem with Earpiece Driver and StereoG round Referenced Headphone Am plifiers Texa s In s t r u m e n t s Literature Number: SN AS439B t í t i o n a LM49150 l Sem iconductor M arch 4, 2009 B O O m r Audio Power Am plifier Series |
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lm49150as439b | |
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Contextual Info: Revised Mar. 1998 JS9P08-AS 1. RF PERFORMANCE SPECIFICATIONS Ta= 25°C CHARACTERISTICS Output Power at ldB Compression Point Power Gain at ldB Compression Point Drain Current Power Added Efficiency SYMBOL CONDITION MIN. TYP. MAX. UNIT 23.0 24.0 — dBm |
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js9p08-as | |
b20 p03
Abstract: GS214 TSD2331 tms 1601 EL B17 B20 n03 G5214
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vsc720327mm/sideg52143-000022bs+7 | |
diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
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diode e1110ln4002ln4003ana 618 20010+6 | |
29f002tcContextual Info: FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29F002T C - 5 5 -70/-90/M B M29 F002B C - 55 /-70/-90 • FEATURES • • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands |
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mbm29f002t-70/-90/mf002b32-pin+2 | |
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Contextual Info: KMM374F203BK KMM374F213BK DRAM MODULE KMM374F203BK & KMM374F213BK EDO Mode without buffer 2Mx72 DRAM DIMM with ECC based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F20 1 3B is a 2M bit x 72 Dynamic RAM high density memory module. The |
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kmm374f203bkkmm374f213bk2mx72kmm374f20+2 | |
mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
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ms800mm0smc3870mc14s00bmc141000/1206+13 | |
XY-6060
Abstract: 3421A fluke T17 H331
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17x17mil-std-456622190ao/24/91+8 | |
OAOLP2
Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
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15consecutiveoaolp2temperature digital display jumo lan msmd transistor 1p7+7 | |
cd 1619 CP fm radio
Abstract: RBS 2206 UAA 1006 cd 1619 CP fm radio RECEIVER NVR 1550 UAA 1004 DP utc 2411 RBS 2302 RBS 2204 ECU 206 7.4.5
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an495/dhc11-controlledan494/dmc68hc+11 | |
AMBE-3000
Abstract: ambe 3000 rj11 pinout to 3.5mm AMBE-3003 AMBE-3003TM data circuit schematics satellite connector AMBE3000 ambe3003 AMBE SOFTWARE JTAG header 7x2
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ambe-3000tm-hdkambe-3000tmambe-3000ambe 3000+8 | |
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Contextual Info: LH28F004SU-Z9 FEATURES 4M 512 x 8 Flash Memory 42-PIN CSP TOP VIEW • 512K x 8 Word Configuration • 2.7 V Write/Erase Operation (5 V ± 0.5 V Vpp, 3.0 V ± 0.3 V V CC, CC’ +15°C to +35°C) - No Requirement For DC/DC Converter To Write/Erase / 1 2 3 |
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lh28f004su-z9j63428smt96118 | |
actron ab
Abstract: 11a18 CHN 949 VF800
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16-bitsst39vf800qsst39vf800actron ab+3 | |
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Contextual Info: F-205 •samtec.con\l\e3< o u i ia « . c SMT HORIZONTAL SOCKET SFMH SERIES SPECIFICATIONS Mates with: FTSH, FSH For co m p le te sp e cifica tio n s see w w w .sam tec.com ?S FM H Insulator M aterial: B lack Liquid C rystal Polym er C o n ta c t M aterial: |
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f-205 | |
TA 7358 TOSHIBA
Abstract: T 9722
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js9p08-aso000000254mmta 7358 toshiba+1 | |
VL82C486
Abstract: vl82c486fc 62C54 I/Phoenix BIOS VL82C486 bios
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vl82c486sc486486-based82c37a+6 | |
RTL8186
Abstract: RTL818 OA41 DWt5
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rtl8186rtl818oa41dwt5 | |
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Contextual Info: TOSHIBA TMP96C141AF CMOS 16-bit MICROCONTROLLERS TMP96C141AF 1. OUTLINE AND DEVICE CHARACTERISTICS TM P96C141AF is high-speed advanced 16-bit m icrocontrollers developed for controlling medium to large-scale equipm ent. TMP96C141AF is housed in an 80-pin flat package. |
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tmp96c141af16-bitp96c141af80-pin+2 | |
O09PContextual Info: TMS29LF400T, TMS29LF400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES • • • • • • • • • 524288 By 8 Bits 262144 By 16 Bits Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors - One 32K-Byte/16K-Word Sector |
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tms29lf400ttms29lf400b8-bit/26214416-bit+3 | |
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Contextual Info: Pulse Electronics www.pulseelectronics.com NOTES: UNLESS OTHERWISE SPECIFIED 1. .69 NOTICE: RoHS THIS IS A RoHS COMPLIANT COMPONENT/PRODUCT. ALL ENGINEERING CHANGES MUST HAVE PRIOR APPROVAL BY THE DESIGN CENTER. _o_□_□_n_o_□_□_a_□_a_o_= @ Pulse |
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t1339fnl0000oop00000 | |
orthicon tube
Abstract: RCA-5826 6bg6 6bg6 tube color television picture tube pin voltage 6BG6G rca tube 26 204T2 RCA Orthicon color PICTURE TUBE
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rca-582614-pinorthicon tube6bg6+7 | |
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Contextual Info: NJG1506R GaAs SPDT SWITCH IC • GENARAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC featuring a low loss, a high isolation and a low control current. In the wide frequency range from 100MHz to 3GHz, this IC operates at a low voltage from 2.5V. Avery small package is adopted. |
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njg1506r100mhz19dbm | |
AM29F002
Abstract: am29f002t Am29F002N
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am29f002/am29f002nam29f002am29f002tam29f002n | |