000033B Search Results
000033B Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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1N995
Abstract: DSAIH000251 DSAIH00025154 DD003 1n995 diode
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000033b 250mA 1N995 75ohms, DSAIH000251 DSAIH00025154 DD003 1n995 diode | |
1N995
Abstract: germanium diodes forward drop 1n995 1n995 diode
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000033b 1N995 250mA 75ohms, 1N995 germanium diodes forward drop 1n995 1n995 diode | |
PT3904Contextual Info: SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T . = 25°C V BR CBO V (BR)CEO V(BR)EBO Max. @ vCB Device Type M arking (V) (V) (V) VCE(sat) DC C urrent Gain ^CBO h FE t>FE @ lc @ VCE Max. @ lc (nA) (V) Min. Max. (mA) (V) (V) (mA) 't Min. @ lc (MHz) (mA) ts' |
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OT-23/TO-236AB PT2222A PT3904 TMPT4401 PT5089 PT6427 PTA06 PTA42 050H33Ã PT3904 | |
Contextual Info: AT29LV256 Features • • • • • • • • • • • • Single 3.3 V + 10% Supply Three-Volt-Only Read and Write Operation Software Protected Programming Low Power Dissipation 15 mA Active Current 20 fxA CMOS Standby Current Fast Read Access Time - 200 ns |
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AT29LV256 AT29LV256-25DC AT29LV256-25JC AT29LV256-25LC AT29LV256-25PC AT29LV256-25TC AT29LV256-25DI AT29LV256-25JI AT29LV256-25LI AT29LV256-25PI | |
MELF 3514 dimensionsContextual Info: KBPC 3500.3516 Silizium-Brückengleichrichter Silicon-Bridge Rectifiers 35 A Nominal current - Nennstrom Alternating input voltage - Eingangswechselspannung Type “W ” T y p e“F” Metal case Metallgehäuse 35.1000 V 28.6 X 28.6 X 7.1 [mm] Casting compound has UL classification 94V-0 |
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UL94V-0 R0D1RS14 DGG174 000017S MELF 3514 dimensions | |
DATA VISION LCD P123
Abstract: data vision p121 DATA VISION LCD P70 DATA VISION P123 DATA VISION LCD MODULE p121
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uPD78P058Y uPD78054Y 78K/0 uPD78058Y PD78P058YKK-T HP9000 b457S2S DATA VISION LCD P123 data vision p121 DATA VISION LCD P70 DATA VISION P123 DATA VISION LCD MODULE p121 | |
Contextual Info: High Performance 128Kx8 CMOS Flash KEPROM II AS29F010 AS29F011 5 \ 128KxX CMOS Flash Memory FEATU RES • Organization: 131,072 words x 8 bits • JEDEC standard write cycle commands • Sector Erase architecture - protects data from accidental changes - Four 32K x 8 sectors |
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128Kx8 AS29F010 AS29F011 128KxX 32-pin 0DDD337 | |
Contextual Info: DIMMPAK Robinson How to Order 8 Byte DIMM Socket DIMS Series 5.0 volts DRAM DIMS — 168 B D 5 — TR Product Series: Number of Contacts Assembly Configuration:. B = Single Row RN DIMMPAK _ Plating Code: Specify TR _ Voltage Option 5 = 5.0 Volts |
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MO-161 E73746 | |
rdn 100 n 20 550
Abstract: bel 100n PM4314 PM4344 PM6344 PM7344 PM8313 pmc-sierra sas
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PM4314 PMC-950857 D000403 rdn 100 n 20 550 bel 100n PM4344 PM6344 PM7344 PM8313 pmc-sierra sas | |
philips 4322 191
Abstract: SAA2002 SAA2002GP SAA2012
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SAA2002 SAA2002 SAA2012) FS256 00AD3b0 philips 4322 191 SAA2002GP SAA2012 | |
IBM PC xt schematics
Abstract: FDC37C662 floppy disk spindle controller schematic diagram disk drive motor controller 82077AA FDC37C651 FDC37C652 FDC37C661 NS16450 FDC37
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FDC37C661 FDC37C662 FDC37C651 FDC37C652 82077AA 05b4bà IBM PC xt schematics FDC37C662 floppy disk spindle controller schematic diagram disk drive motor controller FDC37C652 NS16450 FDC37 | |
T24PContextual Info: THOMSON MIL ET SPATIAUX SIE P T-y-i-sar TOSbfiTE G000331 •=} O THOMSON COMPOSANTS MILITAIRES ET SPATIAUX TH 7833 Yasa 'tR I-îX jS I-i Vssc ^T1-Z T1-2 ®T2-4 ^SSB ^T2-4 ®P ^SSC *^3-4 M»3-4 XiS4 pöl E71 Eßl p5Ì I24I I23I pli Ï2Î1 pol IÏÏÏI fTsl |Î7l fïôl |Î5l |
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G000331 toi-21 400nm) T24P | |
Contextual Info: AVANTEK INC MME D B l l M n t b 0D0Ô33S T H A V A LNO-550 Low N oise Varactor-Tuned O scillator E E C -"T -S C u C A FEATURES • Low FM/Pha$e Noise • 10 mW Minimum Output Power • Low Cost • Reliable Thin-Film Hybrid Construction • Hermetic TO-8 Miniature Package |
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LNO-550 LNO-550 50-ohm | |
working principle of encoder
Abstract: generators winding circuit diagrams BS9450
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237437b FX629 Mil-Std-188-113 D/629/1 December1989 T-75-/9 working principle of encoder generators winding circuit diagrams BS9450 | |
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mmic case stylesContextual Info: fl/A-COM ADV S E M I C O N D U C T O R M Ai 27E D S b 4 a i ô 3 000 0 33 M T T * 7 V . / 3 - O l MA4GM301T-500 2000 MA4GM301T SERIES 2010 2012 2100 GaAs MMIC DC - 2 GHz Voltage Variable Absorptive Attenuator Features • SINGLE OR DUAL DC BIAS CONTROL ■ EASILY CASCADABLE |
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MA4GM301T-500 MA4GM301T mmic case styles | |
Contextual Info: RIFUI • • RX1300 Ideal for 418 MHz, 3 V Data Receivers in UK stud USA High-Sensitivity Passive Design with No R F O scm tion • 2400 b/s Baseband Data Rate • Simple to Apply with Low External P a rts& iq g t • Rugged, Surface-Mount Package Footprint |
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RX1300 000033b X1300 P-X-02-120994A | |
Contextual Info: PMC-Sierra, Inc. P r e l im in a r y I n f o r m a t io n ISSUE 3 PM4314 QDSX QUAD T1/E1 UNE INTERFACE DEVICE FEA TU R ES • Integrates four duplex DSX-1 or CEPT E1 compatible line interface circuits in a single monolithic device. Line format is selected on a per-device basis. |
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PM4314 PMC-950857 | |
oti 64105
Abstract: oti-088
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64-bit OTI-64107/64105 QD00311 b72T4a5 oti 64105 oti-088 | |
Contextual Info: = = = “ = '= IBM043610QLA IBM041810QLA Preliminary 32K X 36 & 64K X 18 SRAM Features • 32K x 36 or 64K x 18 Organizations • 0.5 Micron CMOS Technology • Synchronous Flow-Thru Mode Of Operation with Self-Timed Late Write • Dual Differential Input and Output Clocks. |
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IBM043610QLA IBM041810QLA D0003m 000D34E 03H9038 MDM15DSU-01 | |
Contextual Info: M.S.KENNEDY CORP. 15 AMP, 600 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4356 8 1 7 0 Thompson Road Cicero, N.Y. 1 3 0 3 9 315 699-9201 FEATURES: • • • • • ■ • • MIL-STD-1772 CERTIFIED 600V, 15 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0 .5 °C /W |
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MIL-STD-1772 25KHz 000033b MSK4356 MSK4356B | |
Contextual Info: INTERFACE SPECIFICATION BIDIRECTIONAL CELL BUFFER B t8 2 1 5 1 .0 INTRODUCTION T he B t8215 is a bidirectional buffer w ith a 36-bit bidirectional p o rt and 9 -b it unid irectio n al p o rts th at can be configured to transfer fixed-length cells. Each direction can store up to 512 3 6 -b it w ords. T his part, therefore, |
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t8215 36-bit 32-bit 100-pin | |
Contextual Info: AVG Semiconductors DDi Technical Data Available Q2, 1995 Presettable Binary Up/Down Counter DV4516B This device is a synchronous up/down binary counter con structed with MOS P-Channel and N-Channel enhancement mode devices in a monolithic structure. N Suffix |
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DV4516B AVG-003 AVG-004 1-800-AVG-SEMI | |
Contextual Info: E m m g ç Data Sheet AWRO001X 900 MHz Receiver MMIC s a d v a n c e d p r o d u c t in fo r m a tio n Y o u r G a A s I C S o u rc e Rev 2 FUNCTIONAL BLOCK DIAGRAM FEATURES' Monolithic Downconverter 3dB Noise Figure IF IF 13 dB Conversion Gain Small Surface Mount Package |
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AWRO001X AWR0901X R0901 | |
24C16
Abstract: FM24C16 24C16 equivalent
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FM24C16FRAMÂ 16Kbit 400KHz XicorX24Cl6 FM24C16 24C16 7SS5015 24C16 equivalent |