00-3A Search Results
00-3A Datasheets (19)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| 003A | Essentra Components | TAPERED CAP - OD RANGE: 5.3 - 6. | Original | 4.78MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003A-DIP16
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Sinotech Mixic Electronics Co Ltd | Seven-channel high-voltage, high-current Darlington transistor array with 500mA per channel output, integrated clamp diodes, TTL/CMOS input compatibility, and 50V breakdown voltage, suitable for driving inductive loads such as relays and stepper motors. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003AU
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SLKOR | Seven NPN Darlington pairs, 500mA collector current, 50V outputs, 2.7kΩ base resistor, TTL/5V CMOS compatible. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1003AGWQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V 2.8mΩ N-Ch Power MOSFET in PDFN5x6-8L-W package with 178A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003A
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JCET Group | ULN2003A is a high-voltage, high-current Darlington transistor array with seven NPN pairs, each rated for 500mA collector current and 50V output, featuring integrated clamp diodes and 2.7kΩ base resistors for TTL or CMOS compatibility. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTC3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.3mΩ at VGS=10V, advanced trench technology, low gate charge, and TO-220C-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTE3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.9mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and TO-263-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1003ATLQ
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel TOLL power MOSFET with 2.7 mΩ typical RDS(ON) at 10V VGS, 228A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PowerJE10x12 package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003AL
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Sinotech Mixic Electronics Co Ltd | Seven-channel high-voltage, high-current Darlington transistor array with 500mA output current per channel, 50V breakdown voltage, TTL/CMOS-compatible inputs, integrated clamp diodes, and 2.7kΩ base resistors for direct logic interface. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE4003A
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NCEPOWER | NCE4003A is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 3A continuous drain current, and low on-state resistance of 32mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTG3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 90A N-channel enhancement mode power MOSFET with RDS(ON) less than 3.1mΩ at VGS=10V and 6.4mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN5x6-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
ULN2003A
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Sinotech Mixic Electronics Co Ltd | Seven-channel high-voltage, high-current Darlington transistor array with 500mA output per channel, integrated clamp diodes, TTL/CMOS-compatible inputs, and 50V or 40V breakdown voltage options. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMTQ3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CBM2003AS16
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COREBAI | Seven-channel Darlington transistor array with 500 mA rated collector current per channel, 50 V high-voltage outputs, integrated clamp diodes, and 2.7 kΩ base resistors for direct TTL or 5 V CMOS logic interface. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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JMTK3003A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V, TO-252-3L package, designed for power management and load switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1003ATL
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Jiangsu JieJie Microelectronics Co Ltd | 100V N-channel Power MOSFET in PowerJE®10x12 package with 2.7 mΩ RDS(ON) at 10V VGS, 228A continuous drain current, and low gate charge, suitable for high-efficiency power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
JMSH1003AE7Q
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Jiangsu JieJie Microelectronics Co Ltd | 100 V N-Ch Power MOSFET in TO-263-7L package with 2.8 mΩ RDS(ON) at 10 V VGS, 196 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
G1003A
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AK Semiconductor | G1003A is a MOSFET in SOT23-3L package with 100V drain-source voltage, 5A continuous drain current, 3W power dissipation, and low RDS(ON) of 100 mΩ at 10V gate voltage, suitable for power switching and high-frequency applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SM4003A
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SUNMATE electronic Co., LTD | Surface mount silicon rectifier diodes with 50 to 1000V voltage range, 1.0A average forward current, low forward voltage drop, and SMA/DO-214AC package, suitable for surface mounted applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
00-3A Price and Stock
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Rochester Electronics LLC SIT8003AC-23-33E-31.73660YSIT8003 LOW POWER PROGRAMMABLE O |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIT8003AC-23-33E-31.73660Y | Bulk | 5,000 | 72 |
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Buy Now | |||||
STMicroelectronics ULQ2003ATRANS 7NPN DARL 50V 500MA 16DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ULQ2003A | Tube | 4,507 | 1 |
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ULQ2003A | 16 | 5 |
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Buy Now | ||||||
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ULQ2003A | 689 | 1 |
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Buy Now | ||||||
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ULQ2003A | 3,747 |
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Get Quote | |||||||
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ULQ2003A | 439 |
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Get Quote | |||||||
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ULQ2003A | 4,325 | 9 Weeks | 25 |
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Buy Now | |||||
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ULQ2003A | 9 Weeks | 25 |
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Buy Now | ||||||
Rochester Electronics LLC SB10-03A3DIODE SCHOTTKY 30V 1A DO41 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SB10-03A3 | Bulk | 3,500 | 1,069 |
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Buy Now | |||||
Rochester Electronics LLC SPS1M003AANALOG CIRCUIT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SPS1M003A | Bulk | 500 | 33 |
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Buy Now | |||||
ZETTLER Magnetics Inc BV202S15003A115V INPUT 0.35VA PWR XFMR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BV202S15003A | Tube | 473 | 1 |
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BV202S15003A | 45 | 1 |
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Buy Now | ||||||