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    00-3A Search Results

    00-3A Datasheets (19)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    003A
    		Essentra Components TAPERED CAP - OD RANGE: 5.3 - 6. Original PDF 4.78MB
    badge ULN2003A-DIP16
    		Sinotech Mixic Electronics Co Ltd Seven-channel high-voltage, high-current Darlington transistor array with 500mA per channel output, integrated clamp diodes, TTL/CMOS input compatibility, and 50V breakdown voltage, suitable for driving inductive loads such as relays and stepper motors. Original PDF
    badge JMSH1003AGWQ
    		Jiangsu JieJie Microelectronics Co Ltd 100V 2.8mΩ N-Ch Power MOSFET in PDFN5x6-8L-W package with 178A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. Original PDF
    badge ULN2003AU
    		SLKOR Seven NPN Darlington pairs, 500mA collector current, 50V outputs, 2.7kΩ base resistor, TTL/5V CMOS compatible. Original PDF
    badge ULN2003A
    		JCET Group ULN2003A is a high-voltage, high-current Darlington transistor array with seven NPN pairs, each rated for 500mA collector current and 50V output, featuring integrated clamp diodes and 2.7kΩ base resistors for TTL or CMOS compatibility. Original PDF
    badge JMSH1003ATLQ
    		Jiangsu JieJie Microelectronics Co Ltd 100V N-channel TOLL power MOSFET with 2.7 mΩ typical RDS(ON) at 10V VGS, 228A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PowerJE10x12 package. Original PDF
    badge JMTC3003A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.3mΩ at VGS=10V, advanced trench technology, low gate charge, and TO-220C-3L package. Original PDF
    badge JMTE3003A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 2.9mΩ at VGS=10V and 6.5mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and TO-263-3L package. Original PDF
    badge ULN2003AL
    		Sinotech Mixic Electronics Co Ltd Seven-channel high-voltage, high-current Darlington transistor array with 500mA output current per channel, 50V breakdown voltage, TTL/CMOS-compatible inputs, integrated clamp diodes, and 2.7kΩ base resistors for direct logic interface. Original PDF
    badge JMTG3003A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 90A N-channel enhancement mode power MOSFET with RDS(ON) less than 3.1mΩ at VGS=10V and 6.4mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN5x6-8L package. Original PDF
    badge NCE4003A
    		NCEPOWER NCE4003A is a Channel Enhancement Mode Power MOSFET with 40V drain-source voltage, 3A continuous drain current, and low on-state resistance of 32mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in switching applications. Original PDF
    badge JMTQ3003A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 80A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V and 6.6mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and PDFN3x3-8L package. Original PDF
    badge ULN2003A
    		Sinotech Mixic Electronics Co Ltd Seven-channel high-voltage, high-current Darlington transistor array with 500mA output per channel, integrated clamp diodes, TTL/CMOS-compatible inputs, and 50V or 40V breakdown voltage options. Original PDF
    badge JMTK3003A
    		Jiangsu JieJie Microelectronics Co Ltd 30V, 150A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.4mΩ at VGS=10V, TO-252-3L package, designed for power management and load switching applications. Original PDF
    badge CBM2003AS16
    		COREBAI Seven-channel Darlington transistor array with 500 mA rated collector current per channel, 50 V high-voltage outputs, integrated clamp diodes, and 2.7 kΩ base resistors for direct TTL or 5 V CMOS logic interface. Original PDF
    badge JMSH1003ATL
    		Jiangsu JieJie Microelectronics Co Ltd 100V N-channel Power MOSFET in PowerJE®10x12 package with 2.7 mΩ RDS(ON) at 10V VGS, 228A continuous drain current, and low gate charge, suitable for high-efficiency power switching applications. Original PDF
    badge G1003A
    		AK Semiconductor G1003A is a MOSFET in SOT23-3L package with 100V drain-source voltage, 5A continuous drain current, 3W power dissipation, and low RDS(ON) of 100 mΩ at 10V gate voltage, suitable for power switching and high-frequency applications. Original PDF
    badge SM4003A
    		SUNMATE electronic Co., LTD Surface mount silicon rectifier diodes with 50 to 1000V voltage range, 1.0A average forward current, low forward voltage drop, and SMA/DO-214AC package, suitable for surface mounted applications. Original PDF
    badge JMSH1003AE7Q
    		Jiangsu JieJie Microelectronics Co Ltd 100 V N-Ch Power MOSFET in TO-263-7L package with 2.8 mΩ RDS(ON) at 10 V VGS, 196 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. Original PDF
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    00-3A Price and Stock

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    Texas Instruments ULN2003AINSR

    TRANS 7NPN DARL 50V 0.5A 16SO
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    DigiKey () ULN2003AINSR Digi-Reel 10,813 1
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    ULN2003AINSR Tape & Reel 10,000 2,000
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    Wima FKS3F021003A00JSSD

    CAP FILM 10000PF 5% 250VDC RAD
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    DigiKey FKS3F021003A00JSSD Bulk 3,789 1
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    Avnet Abacus FKS3F021003A00JSSD 12 Weeks 6,000
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    Littelfuse Inc SL1003A230SM

    GDT 230V 10KA 3 POLE SMD
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    DigiKey SL1003A230SM Tape & Reel 1,400 700
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    Sager SL1003A230SM 700
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    KEMET Corporation T520V337M003ATE025

    CAP TANT POLY 330UF 3V 2917
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    DigiKey () T520V337M003ATE025 Digi-Reel 1,000 1
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    Avnet Americas T520V337M003ATE025 Tape & Reel 53 Weeks 1,000
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    Avnet Abacus T520V337M003ATE025 Tape & Reel 21 Weeks 1,000
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    KEMET Corporation T541X108M003AH6710

    CAP TANT POLY 1000UF 3V 2917
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    DigiKey () T541X108M003AH6710 Digi-Reel 832 1
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    T541X108M003AH6710 Cut Tape 832 1
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    T541X108M003AH6710 Tape & Reel 500 500
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