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00--I Datasheets (12)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
AK80T900I
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AK Semiconductor | N-Channel Super Junction Power MOSFET with 800 V drain-source voltage, 900 mΩ maximum RDS(ON), 6 A continuous drain current, low gate charge, and TO-252 or TO-251 package options. | Original | ||||
NCE70T900I
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NCEPOWER | NCE70T900I and NCE70T900K are 700V N-channel super junction power MOSFETs with low on-resistance of 820 mΩ typical, 5A continuous drain current, and ultra-low gate charge, available in TO-251 and TO-252 packages. | Original | ||||
JST100IS-1600BW
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Jiangsu JieJie Microelectronics Co Ltd | 100A RMS, 1600V repetitive peak off-state voltage triac in ITO-247 package, suitable for AC switching applications including phase control, motor speed control, and heating regulation, with insulation rated at 2500 VRMS. | Original | ||||
AK70N100I
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AK Semiconductor | AK70N100I N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 57A continuous drain current, and 16mΩ typical RDS(ON) at 10V gate-source voltage. | Original | ||||
AK60R900I
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AK Semiconductor | N-Channel Super Junction Power MOSFET with 600 V drain-source voltage, 900 mΩ on-resistance, 5 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. | Original | ||||
JST100IS-1200BW
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Jiangsu JieJie Microelectronics Co Ltd | 100A TRIAC with 1200V repetitive peak off-state and reverse voltage, suitable for AC switching in heating, motor control, and lighting applications; features snubberless operation, ITO-247 insulated package, and 2500 VRMS rated insulation. | Original | ||||
NCE70N100I
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NCEPOWER | NCE70N100I is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 57A continuous drain current, and low on-resistance of 12mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||
AK70R900I
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AK Semiconductor | N-Channel Super Junction Power MOSFET with 700 V drain-source voltage, 5 A continuous drain current, 840 mΩ typical on-resistance, and low gate charge for high-efficiency power conversion applications. | Original | ||||
NCE65T900I
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NCEPOWER | NCE65T900I and NCE65T900K are N-channel super junction power MOSFETs with 650 V drain-source voltage, 5 A continuous drain current, 750 mΩ typical RDS(ON), low gate charge, and TO-251/TO-252 package options. | Original | ||||
AK70T900I
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AK Semiconductor | N-Channel Super Junction Power MOSFET with 700 V VDS, 5 A continuous drain current, 820 mΩ typical RDS(ON), ultra-low gate charge, and TO-251 or TO-252 package options. | Original | ||||
AK65R900I
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AK Semiconductor | N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 900 mΩ on-resistance, 5 A continuous drain current, low gate charge, and TO-251 or TO-252 package options. | Original | ||||
AK65T900I
|
AK Semiconductor | N-Channel Super Junction Power MOSFET with 650 V drain-source voltage, 750 mΩ typical on-resistance, 5 A continuous drain current, and low gate charge for high-efficiency power conversion applications. | Original |
00--I Price and Stock
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Panasonic Electronic Components ECE-A1EKS100ICAP ALUM 10UF 20% 25V RADIAL TH |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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| ECE-A1EKS100I | Cut Tape | 693 | 1 |
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ECE-A1EKS100I |
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ATGBICS CWDM-SFP-100BASE-1610-100-I-MSA-ATMSA Compliant SFP 100Mb |
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CWDM-SFP-100BASE-1610-100-I-MSA-AT | Tray | 1,619 | 1 |
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Renesas Electronics Corporation R1EX25002ASA00I#S0IC EEPROM 2KBIT SPI 5MHZ 8SOP |
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R1EX25002ASA00I#S0 | Tape & Reel | 1,585 |
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R1EX25002ASA00I#S0 | 5,000 |
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Texas Instruments PGA2500IDBRIC AUDIO AMP AB 28-SSOP |
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PGA2500IDBR | Cut Tape | 1,394 | 1 |
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| PGA2500IDBR | Digi-Reel | 1,394 | 1 |
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PGA2500IDBR | 195 |
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PGA2500IDBR | 3,000 |
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Microchip Technology Inc PIC32CX1025SG41100-I/E5XIC MCU 32BIT 1MB FLASH 100TQFP |
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PIC32CX1025SG41100-I/E5X | Tray | 207 | 1 |
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PIC32CX1025SG41100-I/E5X | Bulk | 235 | 1 |
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PIC32CX1025SG41100-I/E5X | 5 Weeks | 90 |
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