0.3UF 50V Search Results

IRFP4332

Abstract: IRFPE30 IRFP4332PbF
Contextual Info: PD - 97100A IRFP4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

Contextual Info: PD - 97099A IRFB4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

IRFB4332PBF

Abstract: IRF1010 IRFB4332
Contextual Info: PD - 97099A IRFB4332PbF PDP SWITCH Features l Advanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

map 3204

Abstract: VS80E2A685M-TS0F KS80E1H176M-TR F44F VS80R2J304M-TR ks capacitors
Contextual Info: MARUWA GENERAL CATALOG HIGH CAPACITANCE ¥ HIGH VOLTAGE STACKED TYPES [ KS ¥ VS Series ] a Features • The mounting surface is small. • Compact and large capacity. • Excellent temperature cycling. • Non-polar. • RoHS Compliant. a Applications dielectric

MOSFET "CURRENT source"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Preliminary Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N70K-MK Power MOSFET Preliminary 3A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 3N70K-MK is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12P10 Power MOSFET 9.4A, 100V P-CHANNEL POWER MOSFET  DESCRIPTION The 12P10 uses advanced proprietary, planar stripe, DMOS technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable to be

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N90Z Preliminary Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90Z provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

POWER MOSFET Rise Time

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF3710 Power MOSFET 57A, 100V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF3710 uses advanced process technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or

marking 724 diode sot-363

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60Z Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 1N60Z is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70 Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N70 are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N90 Power MOSFET 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode power MOSFET useing UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary Power MOSFET 10A, 900V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state

10N70

Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a

utc 3580

Abstract: 10N90
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N90 Preliminary 10A, 900V N-CHANNEL POWER MOSFET „ 1 TO-220 DESCRIPTION The UTC10N90 is a N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N70K-MT Power MOSFET 12A, 700V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N70K-MT are N-Channel enhancement mode power MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

3N90

Abstract: 3N90L 400v 3a ultra fast recovery diode MOSFET 400V TO-220 MOSFET 900V TO-220
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N90 Power MOSFET 3 Amps, 900 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 3N90 provides excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.

12N60l

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand