0.22 UH Search Results

Contextual Info: A ew iii WITH EPOXY COATED AL0307 SERIES AL0410 SERIES Electrical Parameters: • Electrical Parameters: A L 0 3 0 7 -T Y P E Standard SPC L UH Test Freq {MHz) Q Min -R22M 0.22 25.2 45 150 0.20 400 -R27M 0.27 25.2 45 150 0.22 380 -R33M 0.33 25.2 45 150 0.24

GP4060

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.

RD07MVS2

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)

RD07M

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES

Contextual Info: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)

02 diode R-1

Abstract: 1SV276
Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Maximum Ratings (Ta = 25°C)

Contextual Info: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power

Contextual Info: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power

1SV276

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)

1SV276

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps

Contextual Info: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps

RD02MUS2

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS2 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W OUTLINE DRAWING DESCRIPTION 6.0+/-0.15 0.2+/-0.05 (0.22) RD02MUS2 is a MOS FET type transistor 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 specifically designed for VHF/UHF RF power

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02MUS1 RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING DESCRIPTION RD02MUS1 is a MOS FET type transistor 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) OUTLINE specifically designed for VHF/UHF RF power

Contextual Info: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Small package Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: HC7 Series HIGH CURRENT 7 Power Inductors Description • Surface mount inductors designed for higher speed switch mode applications requiring lower inductance, low voltage and high current • Inductance range from 0.22 uH to 4.81 uH • Current range from 35.8 to 9.8 Amps

RD07MVS2

Abstract: RD07MVS1 T112 teflon s-parameter 3M Touch Systems diode gp 434
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05

RD04HMS2

Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING

RD04HMS2

Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Contextual Info: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING

Contextual Info: 1SV284 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)

1SV284

Contextual Info: 1SV284 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV284 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C1 V/C4 V = 2.0 typ. · Low series resistance: rs = 0.22 Ω (typ.) · Useful for small size tuner. Maximum Ratings (Ta = 25°C)