0.1 J100 Search Results

KF 13002 F

Abstract: TRANSISTOR 9642 kf 13002 rbm 0505 2SC5787 NE894M13 NE894M13-A NE894M13-T3-A S21E Q1 k 1821
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 0.1 3 0.2+0.1 ñ0.05 0.3 0.1 0.125+0.1 ñ0.05 NEC's NE894M13 transistor is designed for oscillator applications above 3 GHz. The NE894M13 features low voltage, low

pt 7313

Abstract: 5252 F 1105 transistor 2SC5618 NE687M13 S21E NF 028 transistor pt 6009 5252 F 1105
Contextual Info: NEC's NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited

5252 F 1105 transistor

Abstract: pt 7313 5252 F 1105 ic 7313 2SC5618 IB 6405 nec 4814 transistor pt 6009 of IC 9290 NE687M13
Contextual Info: NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 The NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited for

pt 7313

Abstract: 5252 F 1105 transistor 2SC5618 NE687M13 NE687M13-A NE687M13-T3-A S21E GA82 5252 F 1105 ic 7313
Contextual Info: NEC's NPN SILICON TRANSISTOR NE687M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 1 0.3 3 0.1 0.125+0.1 ñ0.05 0.1 0.5±0.05 NEC's NE687M13 transistor is designed for low noise, high gain, and low cost requirements. This high fT part is well suited

LB 11899

Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05

ic 7738

Abstract: 2SC5801 NE851M13 NE851M13-T3 S21E kf 203 transistor NEC 2501 LE 240
Contextual Info: NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05 E7

IC 2262 AF

Abstract: LB 11899 2SC5801 applications IC 7476 160 e7 901 704 16 08 55 MJE 280 power transistor transistor BF 697 S21E NE851M13
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW PUSHING FACTOR 0.7 • 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS LOW PHASE NOISE 0.7±0.05

kf 13002

Abstract: 2SC5787 TRANSISTOR 9642 NE894M13 NE894M13-A NE894M13-T3-A S21E rf npn power transistor c 10-12 ghz s-1125
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05

BF 6591

Abstract: nec 7915 2SC5617 transistor on 4409 NEC 9714 RF NPN POWER TRANSISTOR C 10-12 GHZ NE685 NE685M13 NE685M13-T3 S21E
Contextual Info: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz 0.7±0.05

kf 13002

Abstract: TRANSISTOR 9642 mje 3055 KF 13002 F 2SC5787 NE894M13 S21E transistor BR 13002
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05

BF 6591

Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
Contextual Info: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz

PS 229

Abstract: 2SC5277 ITR08213 ITR08214 ITR08215 ITR08216 ITR08217
Contextual Info: Ordering number:ENN5187 NPN Epitaxial Planar Silicon Transistor 2SC5277 UHF to S Band Low-Noise Amplifier, OSC Applications Package Dimensions unit:mm 2106A [2SC5277] 0.75 0.6 0.3 0.4 3 0 to 0.1 0.8 1.6 2 1 0.2 0.1 0.5 0.5 0.1max • Low noise : NF=0.9dB typ f=1GHz .

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

MARKING 201

Abstract: j200 transistor SANYO SS 1001 2SC4867 2SC4871 FH201
Contextual Info: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 VCO OSC Circuit Applications Package Dimensions unit:mm 2149 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6

equivalent ZO 607

Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Contextual Info: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6

Contextual Info: 3W, L & S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5°C/W Functional Characteristics 0.2 ± 0.1

J101-J103

Abstract: ad9883 LED205 SAA7113 MB86295EB01 MB86295-EB01 j104 J151 J153 J207
Contextual Info: CORAL P MB86295-EB01 Rev. 5.0 April 2004 1.3 CORAL P Evaluation Board Revision 1.3 2004 Fujitsu Microelectronics Europe Page 1 MB86295-EB01 Evaluation Board Manual Revision Control Revision Number Date Description of changes 0.1 9/8/02 Initial Release 0.9

nec 0882

Abstract: NEc 79A 8582
Contextual Info: 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1

nec 0882

Abstract: GRM40X7R104K025BL IMT-2000 NE6500379A NE6500379A-T1
Contextual Info: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor nec 0882 GRM40X7R104K025BL AF127 100A0R5 case transistor 79A IMT-2000
Contextual Info: NEC'S 3W, L/S-BAND NE6500379A MEDIUM POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A Source • LOW THERMAL RESISTANCE: 5 C/W Functional Characteristics 0.2 – 0.1

Contextual Info: 1/2 Multilayer Chip Band Pass Filters(Balance Output Type) For Bluetooth & 2.4GHz W-LAN Conformity to RoHS Directive DEA Series DEA162450BT-7205B1 SHAPES AND DIMENSIONS 0.5max. 5 4 1 2 3 0.25±0.1 0.8±0.2 0.2±0.1 1.6±0.1 6 0.3±0.1 0.1±0.1 Terminal functions

NEZ1414-8E

Abstract: 39.5dB GaAs FET
Contextual Info: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION

NE68839

Abstract: NE68939 NE68939-T1-A NE69039 PC2771T
Contextual Info: NEC'S NPN SILICON EPITAXIAL TRANSISTOR FEATURES NE68939 OUTLINE DIMENSIONS Units in mm • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: PC2771T NE68839 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2.tx transistor
Contextual Info: SILICON TRANSISTOR NE68939 NPN SILICON EPITAXIAL TRANSISTOR FEATURES • OUTPUT POWER AT 1dB COMPRESSION POINT: 24.5 dBm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 • 4 PIN MINI MOLD PACKAGE: NE68939