0.045 UF Search Results

STP30NF10FP

Abstract: STB30NF10 STP30NF10 diode 400A
Contextual Info: STB30NF10 STP30NF10 STP30NF10FP N-CHANNEL 100V - 0.038 Ω - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB30NF10 STP30NF10 STP30NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.045 Ω <0.045 Ω <0.045 Ω 35 A

STN4NE03

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STN4NE03

Contextual Info: STN4NE03 N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

BUZ11A

Abstract: buz11a circuit datecode G1
Contextual Info: BUZ11A N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET TYPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

STS4DNF60L

Contextual Info: STS4DNF60L  N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 4 A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

N4NE03

Abstract: n4ne P008B STN4NE03 P008B DIODE
Contextual Info: STN4NE03  N - CHANNEL 30V - 0.045Ω - 4A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N4NE03 30 V < 0.06 Ω 4 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STS4DNF60L

Contextual Info: STS4DNF60L N - CHANNEL 60V - 0.045Ω - 4A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS4DNF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 4A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS5NF60L

Contextual Info: STS5NF60L N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5NF60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 5A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STS5NF60L

Contextual Info: STS5NF60L  N - CHANNEL 60V - 0.045Ω - 5A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS5NF 60L • ■ ■ V DSS R DS on ID 60 V < 0.055 Ω 5 A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

STE70NM50

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STE70NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

mosfet 60v 60a

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET PRELIMINARY DATA TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY

STE70NM50

Contextual Info: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

BUZ11

Abstract: stmicroelectronics datecode BUZ11a buz11a circuit datecode G1
Contextual Info: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A -TO-220 STripFET POWER MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

p30ne06

Abstract: STripFET P30NE0 P30NE STP30NE06 STP30NE06FP transistor K O220
Contextual Info: STP30NE06 STP30NE06FP  N - CHANNEL 60V - 0.045 Ω - 30A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID ST P30NE06 ST P30NE06FP 60 V 60 V < 0.055 Ω < 0.055 Ω 30 A 17 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: Package Information www.vishay.com Vishay Siliconix TO-251AA IPAK   E A MILLIMETERS L2 c1 b2 D L3 L1 b1 b e MIN. MAX. MIN. MAX. A 2.21 2.38 0.087 0.094 A1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

Contextual Info: STS4DNF60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 STripFET POWER MOSFET TYPE STS4DNF60L • ■ ■ VDSS RDS on ID 60 V <0.055 Ω 4A TYPICAL RDS(on) = 0.045 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of

STY60NM50

Contextual Info: STY60NM50 N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE STY60NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 60 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE

buz11a circuit

Abstract: BUZ11A st buz11a ISD 1400 d BUZ11A data
Contextual Info: BUZ11A  N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET MOSFET T YPE BUZ11A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 26 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

RB520S-40

Contextual Info: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance

Contextual Info: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance