NCE30P30K
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NCEPOWER
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NCE30P30K is a -30V, -30A trench MOSFET with low RDS(ON) of 18mΩ at VGS=-10V, advanced gate charge characteristics, and high current capability in a TO-252-2L package. |
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NCE30P30G
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NCEPOWER
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NCE30P30G is a -30V, -30A trench technology power MOSFET with low RDS(ON) of less than 10mΩ at VGS=-10V, suitable for load switch and PWM applications in a surface mount DFN5x6-8L package. |
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SMD2920P300TF/16
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability for over-current protection in electronic devices.Surface mount PTC resettable fuse with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability for over-current protection in electronic devices. |
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SMD2920P300TF/6
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SUNMATE electronic Co., LTD
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Surface mount PTC resettable fuse with holding current from 0.3A to 3.0A, working voltage up to 60V, low resistance, fast response, and high surge capability for over-current protection in electronic devices. |
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NCE30P30L
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -30A continuous drain current, 19mΩ RDS(ON) at VGS=-10V, and low gate charge, suitable for high current load applications. |
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AK30P30L
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AK Semiconductor
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AK30P30L P-Channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -30A continuous drain current, RDS(ON) less than 19mΩ at VGS=-10V, advanced trench technology, low gate charge, suitable for high current load applications. |
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NCE40P30K
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NCEPOWER
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NCE40P30K is a -40V, -30A P-channel MOSFET with advanced trench technology, offering low RDS(ON) of 18mΩ at VGS=-10V and low gate charge, suitable for high current switching applications. |
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NCE30P30K
