MBR3040CG
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AK Semiconductor
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30A surface mount Schottky barrier rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, low forward voltage drop, high surge current capability up to 200A, and operating junction temperature up to 175°C. |
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VSP040C04MD
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VANGUARD
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40V N+P channel enhancement mode MOSFET in PDFN5x6 dual package with low on-resistance of 26 mΩ (N-channel) and 28 mΩ (P-channel) at VGS=±10V, rated for 20A continuous drain current and featuring fast switching capabilities. |
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DBC040C16KQ
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Jiangsu JieJie Microelectronics Co Ltd
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DBC040C/xxKQ-KxxA is a vacuum-welded DBC module with inverse parallel SCRs, rated for 1200V or 1600V repetitive peak voltage, 40A average on-state current, and features high electrical performance and thermal dissipation. |
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MUR1040CT
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JCET Group
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Super fast recovery rectifier with 400V peak repetitive reverse voltage, 10A average rectified output current, 35ns reverse recovery time, low forward voltage of 1.1V at 125°C, and high operating junction temperature up to 150°C. |
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MURF1040CT
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JCET Group
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Super fast recovery rectifier with 400V peak repetitive reverse voltage, 10A average rectified output current, 35ns reverse recovery time, low forward voltage of 1.1V at 125°C, and high operating junction temperature up to 150°C. |
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MBR4040CT thru MBR40200CT
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CREATEK Microelectronics
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Schottky Barrier Rectifier Diode in TO-220 package with 40A average forward current, 200A surge capability, low forward voltage drop, and reverse voltage ratings from 40V to 200V, suitable for high frequency and power switching applications. |
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MBR2040CT Thru MBR20200CT
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CREATEK Microelectronics
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Schottky Barrier Rectifier Diodes in TO-220AB package, 45 to 200V DC blocking voltage, 20A average forward current, low forward voltage drop, high surge and current capability, suitable for low voltage high frequency inverters and polarity protection. |
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JX040C
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Jiangsu JieJie Microelectronics Co Ltd
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4A sensitive gate SCR in TO-220C package with 600V repetitive peak off-state and reverse voltage, high dV/dt capability, and IGT ≤200uA, suitable for residual current circuit breakers, igniters, and similar applications. |
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MBR2040CG
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AK Semiconductor
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Surface Mount Schottky Barrier Rectifier in TO-263 package, with reverse voltage ratings from 40V to 200V, forward current up to 20A, low forward voltage drop, and high surge current capability of 150A. |
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SF2040CT
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Microdiode Semiconductor
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Reverse Voltage - 100 to 600 Volts, Forward Current - 20.0 Ampere, UL 94V-0, TO-220AB case, solder plated terminals, weight 2.24 grams. |
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SF1040CT
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Microdiode Semiconductor
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Reverse Voltage - 100 to 600V, Forward Current - 10.0A, UL 94V-0, void-free molded plastic, low reverse leakage, high surge current, 250°C soldering, JEDEC TO-220AB, solder plated terminals. |
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DBC040C12KQ
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Jiangsu JieJie Microelectronics Co Ltd
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DBC040C/xxKQ-KxxA is a vacuum-welded DBC module with inverse parallel SCRs, rated for 1200V or 1600V repetitive peak voltage, 40A average on-state current, and features high electrical performance and thermal dissipation. |
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HL7040C
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Halo Microelectronics
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HL7040C是针对小体积便携式应用的高度集成锂离子和锂聚合物电池充电芯片。该产品由USB端口或AC适配器供电，内含输入过压保护，高输入电压范围支持低成本的非稳压适配器。 HL7040C是单电源输出充电芯片，如果在10小时的安全定时器期间内平均系统负载能让电池充满电，则可以使系统负载与电池并联。电池充电分为以下三个阶段：预充、恒定电流和恒定电压。在所有充电阶段，内部控制环路都会监控芯片的结温，当其超过内部温度阈值时，它会主动减少充电电流。 充电器功率级和充电电流监测功能完全集成在一起，该充电器具有高精度电流和电压调节环路功能、充电状态显示，和充电截止功能。预充电电流和截止电流阈值都可以通过HL7040C的外部电阻进行编程，快充电流值也可以通过一个外部电阻进行编程。 |
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MUR2040CD
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CREATEK Microelectronics
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MUR2040CD is a fast recovery epitaxial diode in TO-220ABW package with 400 V peak repetitive reverse voltage, 10 A average forward rectified current, 1.3 V forward voltage at 10 A, and 35 ns reverse recovery time. |
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MBR1040CG
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AK Semiconductor
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Surface mount Schottky barrier rectifier in TO-263 package with reverse voltage ratings from 40V to 200V, forward current up to 10A, low forward voltage drop, and high surge current capability of 100A. |
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MBR3040CG
