0 280 130 055 Search Results

Contextual Info: Package Number 124 - EMI Shield - M IN. M AX. 1.320 1.380 1.320 1.380 .350 450 .040 ' 060 .600 700 .01 5 025 1 .1 8 0 ' .280 .150 ' 250 .150 250 .015 055 .130 230 M IL L IM E T E R S IN C H E S _ M AX. M AX. M IL L IM E T E R S M IN. I M AX. 3 3 .5 3 3 5.05

Contextual Info: 12 13 11 10 OPTIONAL PICK AND P LA C E CAP ii I— 1 M±0.15 l.5 8 ± 0 .0 5 SEE NOTES 4 & 9. lA y A , m M x 2 IBI |Q [Ç lA Ç y 6. IQ .2 4 0 V .4 2 0 Ì V I REF. P.C. BOARD PAD LAYOUT AT ENDS FOR NO PEG VERSION. PEG OPTIONS 3.30 .130 1.40 REF. .055 R E F .-,

SDWL2520

Abstract: SDWL3225 SDWL2520F SDWL3225F100J SDWL3225F120J SAR 2205
Contextual Info: Chequers Electronic China Limited Wire Wound Chip Ferrite Inductor (SDWL-F Series) ● Dimension SDWL-F C D A Type A B C D SDWL2520 [1008] 2.5±0.2 [.098±.008] 2.0±0.2 [.079±.008] 1.8±0.2 [.071±.008] 1.4±0.1 [.055±.004] SDWL3225 [1210] 3.2±0.2 [.126±.008]

SICK WL 25 123

Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Contextual Info: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

VE09 2750

Abstract: VE07 2750 varistors ve07 2750 ve17 2750 0461K VE07 0600 ve09 0151 varistors ve09 2750 varistors ve07 VE17 0251
Contextual Info: THOMSON COMPONENTS THOMSON PASSIVE 4hE D • T0EÔ3QS D0003ÔÔ b ■THP VE SERIES EPOXY DIPPED ZINC OXIDE VARISTORS r-/;-z5 DIMENSIONS TYPE D max. mm ins. H max. mm ins. +10% -0.05 mm ins. E +0.8 mm ins. VE07 7 .276 10 .394 0.6 .024 5.08 .200 VE09 9 .354

Contextual Info: FR801S Thru FR807S Fast Recovery Rectifiers .190 MAX 4.82 3.8 0.1 .130 (3.3) .100 (2.54) .401 (10.2) .386 (9.8) .055 (1.4) .043 (1.1) .230 (5.85) MIN .037 (0.68) .015 (0.38) .624 (15.87) MAX 0.04 M I X (1.0) .500 (12.7) MIN .051 (1.3) MAX .250 (6.35) MAX

Contextual Info: SF81S thru SF88S 3.8 0.1 .130 3.3 .100 (2.54) .401 (10.2) .386 (9.8) Super Fast Recovery Rectifiers .190 MAX (4.82) .055 (1.4) .043 (1.1) .230 (5.85) MIN .037 (0.68) .015 (0.38) .624 (15.87) MAX 0.04 M I X (1.0) .500 (12.7) MIN .051 (1.3) MAX .250 (6.35)

Contextual Info: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C

SF1004C

Abstract: SF1006C SF1005C
Contextual Info: SF1001C thru SF1008C Super Fast Recovery Rectifiers Glass Passivation Junction .189 4.82 .0 055(1.4) .0 043(1.1) .014(0.36) .1(2.54) .129(3.3) .153(3.9) .145(3.7) .026(0.68) .173(4.4) .403(10.26) .385(9.8) .251(6.4) .228(5.8) .624(15.87) .057(1.45) .046(1.16)

ES2J

Abstract: 1000C 2f j
Contextual Info: ES2A thru ES2J SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 2.0 AMPERES SMA/DO-214AC .055 1.40 .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203)

1602C

Abstract: HER1601-05 1604C 1603C
Contextual Info: HER1601-05 HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 16 Amperes Low power loss,high efiiciency. Low leakage. .190 MAX 4.82 .401(10.2) .386(9.8) High speed switching. TO-220 _ 0.1 3.8 + .055(1.4) .043(1.1) High current capability.

1000C

Contextual Info: ES2AA thru ES2JA SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 2.0 AMPERES SMA/DO-214AC .055 1.40 .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203)

1602C

Abstract: HER1605C HER1601C
Contextual Info: HER1601C THRU HER1605C HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 16 Amperes Low power loss,high efiiciency. Low leakage. .190 MAX 4.82 .401(10.2) .386(9.8) High speed switching. TO-220 _ 0.1 3.8 + .055(1.4) .043(1.1) High current capability.

IXTP130N10T

Abstract: IXTA130N10T IXTP130N10 130n10 S5080
Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

IXFA130N10T

Abstract: IXFP130N10T 130N10T S5080 130n10
Contextual Info: Preliminary Technical Information TrenchMVTM Power MOSFET HiperFETTM IXFA130N10T IXFP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast intrisic diode TO-263 (IXFA) G Symbol Test Conditions Maximum Ratings

Contextual Info: Pulse and High-Frequency, Radial-Leaded Polypropylene Capacitors Types DPP, DPPS, DPFF, DPPM, DPMF Highlights-Type DPP is standard film/foil construction. Types DPPS and DPFF are series-wound extended foil with a floating common foil for 800 Vdc and up.

Contextual Info: Pulse and High-Frequency, Radial-Leaded Polypropylene Capacitors Types DPP, DPPS, DPFF, DPPM, DPMF Highlights-Type DPP is standard film/foil construction. Types DPPS and DPFF are series-wound extended foil with a floating common foil for 800 Vdc and up.

1607G

Abstract: SFA1608 1602G 1603G 1604G 1606G SFA1601G SFA1608G
Contextual Info: SFA1601G - SFA1608G 16.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) High efficiency, low VF

APT10026JN

Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
Contextual Info: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on

ana 650 DIP 8

Abstract: HV04
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

101 2KV

Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)