0 280 130 055 Search Results

SDWL2520

Abstract: SDWL3225 SDWL2520F SDWL3225F100J SDWL3225F120J SAR 2205
Contextual Info: Chequers Electronic China Limited Wire Wound Chip Ferrite Inductor (SDWL-F Series) ● Dimension SDWL-F C D A Type A B C D SDWL2520 [1008] 2.5±0.2 [.098±.008] 2.0±0.2 [.079±.008] 1.8±0.2 [.071±.008] 1.4±0.1 [.055±.004] SDWL3225 [1210] 3.2±0.2 [.126±.008]

SICK WL 25 123

Abstract: SICK 30 fgs sick 14 fgs sick DS 50 sick optic typ WL 9 sick wl 170 sick WL 14 p 430 Sensick Sensors DT 500 AD-LL-2M2 Sensick ds 60
Contextual Info: ground suppression, ASI interface, fibre-optic cable versions, insensitivity to ambient light and mutual interference when units are installed close together, are all device standards. The WL 12 G “glass photoelectric switch” designed for filling systems used in the beverage industry, represents more than just a

TPV3100

Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
Contextual Info: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE

Contextual Info: Preliminary Technical Information IXTA130N10T IXTP130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 100 V = 130 A Ω ≤ 8.5 mΩ TO-263 (IXTA) G S (TAB) Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 175°C

ES2J

Abstract: 1000C 2f j
Contextual Info: ES2A thru ES2J SURFACE MOUNT SUPERFAST RECTIFIER VOLTAGE - 50 TO 600 VOLTS CURRENT - 2.0 AMPERES SMA/DO-214AC .055 1.40 .062(1.60) .098(2.50) .114(2.90) .157(4.00) .181(4.60) .006(.152) .012(.305) .078(2.00) .096(2.44) .030(0.76) .060(1.52) .004(.102) .008(.203)

1602C

Abstract: HER1605C HER1601C
Contextual Info: HER1601C THRU HER1605C HIGH EFFICIENCY RECTIFIER VOLTAGE RANGE CURRENT FEATURES 50 to 400Volts 16 Amperes Low power loss,high efiiciency. Low leakage. .190 MAX 4.82 .401(10.2) .386(9.8) High speed switching. TO-220 _ 0.1 3.8 + .055(1.4) .043(1.1) High current capability.

130N10T

Abstract: 130n10 IXTP130N10
Contextual Info: Preliminary Technical Information IXTH130N10T IXTQ130N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 100 V = 130 A Ω ≤ 8.5 mΩ TO-247 (IXTH) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ

Contextual Info: TrenchMVTM Power MOSFET IXTA130N10T IXTP130N10T VDSS ID25 = = 100V 130A Ω 9.1mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

1607G

Abstract: SFA1608 1602G 1603G 1604G 1606G SFA1601G SFA1608G
Contextual Info: SFA1601G - SFA1608G 16.0 AMPS. Glass Passivated Super Fast Rectifiers TO-220AC .185 4.70 .175(4.44) .412(10.5) MAX .113(2.87) .103(2.62) Features .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) .27(6.86) .23(5.84) .594(15.1) .587(14.9) High efficiency, low VF

ana 650 DIP 8

Abstract: HV04
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

101 2KV

Abstract: X7R 1KV AN240 capacitor 270 2kv hv 102 AN120 HV03 HV05 N1500
Contextual Info: High Voltage DIP Leaded HV Style U.S. Preferred Styles C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 µF (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: Preliminary Technical Information IXGH25N250 IXGT25N250 IXGV25N250S High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 60 A VCE sat ≤ 2.9 V TO-247 (IXGH) Symbol Test Conditions VCES TJ = 25°C to 150°C VCGR TJ = 25°C to 150°C; R

CAPACITOR 10k 3KV

Abstract: E 203 M 1KV 223 1KV AN240 AN120 HV03 HV05 N1500 HIGH VOLTAGE capacitor 4kv
Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

Contextual Info: High Voltage DIP Leaded HV Style C0G Dielectric N1500 X7R Dielectric General Specifications General Specifications General Specifications Capacitance Range 100 pF to 1.2 F (25°C, 1.0±0.2 Vrms (open circuit voltage) at 1 KHz, for ≤100 pF use 1 MHz)

IXBK55N300

Abstract: IXBX 55N300 IXBX55N300
Contextual Info: IXBK55N300 IXBX55N300 High Voltage, High Gain BiMOSFETTM VCES IC110 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: DATA LDT, LDS SWITCHES – MOMENTARY LDT AND LATCHING (LDS) ACTION BENEFITS Absolute reliability and simple assembly Compact design with very small mounting depth Excellent price/performance ratio Suitable for front and print-mounting Good illumination Many different application fields

Contextual Info: High Voltage, High Gain BiMOSFETTM VCES IC110 IXBK55N300 IXBX55N300 = 3000V = 55A ≤ 3.2V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 32A VCE sat ≤ 2.35V IXGH32N120A3 IXGT32N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: B U R R -B R O W N DF1750 IMMI Dual Channel DIGITAL DECIMATION FILTER FEATURES DESCRIPTION • USER SELECTABLE FOR 1/4 OR 1/2 DECIMATING RATIOS • USER SELECTABLE FOR 16- OR 18-BIT INPUT DATA • SERIAL DATA INPUT IS COMPATIBLE WITH THE BURR-BROWN PCM1750 ADC

Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor VCES IC110 IXBK75N170 IXBX75N170 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ixbk75n170

Abstract: PLUS247 IXBX75N170 IXBX 75N170
Contextual Info: Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBK75N170 IXBX75N170 VCES IC110 VCE sat = 1700V = 75A ≤ 3.1V TO-264 (IXBK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

irf9110

Abstract: SOT-123 IRF224 irf113 1rf48 BUZ10 BUZ63 IRF9122 irfl33 IRF034
Contextual Info: - 250 - Ta=25<1C f m € tt € t Vd s or 4- V d g Vg s (V) (V) If l: * /CH * /CH (A) (W) V g s th) 1DSS Jg s s Pd Id max (nA) Vg s (V) C m A) Vd s (V) (V) (V) Id (mA) ff] % ft 1± Ciss (max) *typ V g s ( 0 ) (V) *typ (A) Id (A) 140* -25 TO-220AB 190* 25 TO-220AB

Contextual Info: TrenchMVTM Power MOSFET VDSS ID25 IXTH130N10T IXTQ130N10T RDS on N-Channel Enhancement Mode Avalanche Rated = 100V = 130A Ω ≤ 9.1mΩ TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ

acrian RF POWER TRANSISTOR

Abstract: acrian RF POWER TRANSISTOR 300 w transistor c128 C1-28-2 CM25-28 transistor d 571 CM10-28 Acrian transistor c1-28 acrian inc
Contextual Info: ACRIAN INC T7 D E § 0 1 f l 2 □□ □ U h ? 7 p C GENERAL DESCRIPTION The C1-28 is a UHF power transistor designed to produce 1 watt of RF power when operated from a 28V power supply and used below 500MHz. The C1 -28 is also available in a stud package as part No. C1-28Z.