0/SM 4151 Search Results

2sa1876

Contextual Info: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]

MT5C2561

Abstract: TRANSISTOR AO SMD MARKING
Contextual Info: 256K X 1 SRAM MILITARY SRAM • • • • PIN ASSIGNMENT Top View SM D 5962-88725 JA N M 385 1 0 /2 9 3 M IL-STD -883, C lass B Radiation tolerant (consult factory) 24L/300 DIP (D-9) AOC •W 24 A lt 23 22 A2 21 A3 A4 20 19 A5 E 18 A6 £ A7 17 A8 16 _Q [ 10 15

SM 4151

Abstract: 1N5229B 1N4623 do 213aa SP6316
Contextual Info: Zener Regulator Diodes Part Number Mlcrosemi Division Package Outline Data Power Type; Mil W i Spec Sheet ID Vz (V) SM SM STD SM STD STD STD STD SM SM STD STD STD STD STD STD STD STD SM SM STD SM STD SM STD SM STD SM STD SM STD STD STD STD SM SM SM SM STD

reco relay

Abstract: 5 pin relay dc 20v i3001 RELAY 20A 12V
Contextual Info: fü HC5526 H A R R IS S E M I C O N D U C T O R August 1998 ITU CO/PABX SU C with Low Power Standby File Num ber 4151.5 Features • Dl M on olithic High Voltage Process T he H C 5526 is a su b scrib e r line interface circu it is co m p lia n t w ith C C IT T standards. E nh an cem e nts include im m u nity to

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

SM 4151

Abstract: 2sc497
Contextual Info: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo

29024

Abstract: burndy burndy ms N28F010 28f010-200
Contextual Info: intd. ¡SM001FLKA 1 MBYTE 512K x 16 CMOS FLASH SIMM • High-Performance — 120 ns Maximum Access Time — 16.67 MB/s Read Transfer Rate ■ Standard 80-Pin Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/

ikrae

Abstract: SM 4151 minotaur msr8t CI 7413 Allen-Bradley 1 IC 7413
Contextual Info: GuQfcJTmo/tLGr MINOTAUR MSR8T S K lfO U N H a INPUT MONHORWG SAPE1Y RflAY & ETTBISIOM UNIT. IflJUS-SKMBHBTSSAKn* FÜR SICHERH0 T5SCHAUEI UNO NOT-AUS-BEFEHISÖRÄIE MCAJUUKR B K A K UND EWtlTBUNGSBNHHT. i m de m m un cahai pour ih te m k ju iiia g h , a w o s m

vk200 choke

Abstract: j310 j310c variable trimmer MVM010W SM 4151 J308
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JF ET VH F/UHF A m plifiers N -C h a n n e l — Depletion J308 J309 J310 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage V DS 25 Vdc Gate-Source Voltage VG S 25 Vdc Forward Gate Current 'G F 10 mAdc

SSD1606

Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1606 Advanced information 4GS Active Matrix EPD 128 x 180 Display Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.

242202

Abstract: a1768 a80486dx2 VME 5v 3.3v timing sequence 241618 Intel overdrive
Contextual Info: intei EMBEDDED ln te lD X 2 T M Integrated Floating-Point Unit Speed-Multiplying Technology PROCESSOR Data Bus Parity Generation and Checking 32-Bit RISC Technology Core Boundary Scan JTAG 8-Kbyte Write-Through Cache 3.3V Processor, 50 MHz, 25 MHz CLK — 208-Lead Shrink Quad Flat Pack

Contextual Info: in tj. 28F400BX-T/B, 28F004BX-T/B 4 MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY • x8/x16 Input/Output Architecture — 28F400BX-T, 28F400BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs ■ Very High-Performance Read

hd63485

Abstract: HD63484 HD63486CP32 HD63486CP64 F-D31 HD63486 frame buffers gvac BV EI 302 2000 FD31
Contextual Info: H D63486-Graphic Video Attribute Controller GVAC Description Pin D escription T h e HD63486 LSI b elo n g s to th e A C R T C ad v an ced C R T co n tro lle r fam ily. It co n v erts fram e b u ffer d a ta to serial video signals. It c o n tain s

diode LT UG 1007

Abstract: SM 4151
Contextual Info: I I i1— R e a lt im e d o c k /c a le n d a r u IBUS 1, i s " A p r i i ' 1 99 9 P r o d u c t s p e c ific a tio n G e n e ra l d e s c r ip tio n The PC F8563 is a C M O S real-tim e clock/calendar optim ized for low pow er consum ption. A program m able clock output, interrupt output and voltage-low detector

SP126

Contextual Info: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt

40349

Abstract: ASTM-B16 QQ-C-530 901-9872
Contextual Info: 901-9872 NOTES. DRAWING NO. THIRD ANGLE PROJ. 1. DO NOT S C A L E THIS DRAWING. 2. M ATERIALS OF CONSTRUCTION. S H E L L , HOUSING, C O V E R - B RASS ASTM -B16 H02, C36000 , GOLD P LA TE D (.000003 MIN) CO NTACT PIN - BRASS (ASTM -B16 H02, C36000) , GOLD P LA T E D <,000050 MIN)

SM 4151

Abstract: SM+4151 tr/SM 4151 0/SM 4151
Contextual Info: V - F / F - V CONVERTOR NJM 4151 T he NJM4151 provide a simple low-cost m ethod of A /D conversion. They have all the inherent advantages of the voltageto-frequency conversion technique. The output of NJM4151 is a series of pulses of constant duration. T he frequency of

SM 4151

Contextual Info: PRECISION 1.25 VOLT MICROPOWER VOLTAGE REFERENCE ISSUE 3 - FEBRUARY 1998 DEVICE DESCRIPTION FEATURES The ZR12D uses a bandgap circuit design to achieve a pre cisio n m icro p o w e r voltage re fe re n c e o f 1.25 v o lts . The de vice is available in a sm all outline SOT23 surface

417400

Abstract: 77261 T 2109 TMS416400 TMS416400P TMS417400 TMS417400P TMS426400 TMS426400P TMS427400
Contextual Info: TMS416400, TMS416400P, TMS417400, TMS417400P TMS426400, TMS426400P, TMS427400, TMS427400P 4194304-WORD BY 4-BIT HIGH-SPEED DRAMS SM KS881A - MAY 1 9 9 5 - REVISEDJUNE1995 Electrical characteristics for TM S416400/P and TM S417400/P is Production Data. Electrical

BAV54-30

Abstract: 1N4148F BAV54-70 35P4 BAV54 1n4152f 4148f BAY68 BAV54-100 BAW 43
Contextual Info: Silicon signal diodes * High speed switching Diodes de signa! au silicium Type - Case V B oitier V *0 Im A) v(Vp) / / max max max r V rm T a m b 2 5 °C Commutation rapide ' «F (m A ) IR ,/ V r ( n A ) / (V ) 'R / v R <mA ) / (V ) C t rr if D R S 75 tp F)

heds 5310

Abstract: VC 5022-2 p605 mosfet HEDS 6310 encoder heds 6310 acsl 086 s SMD MOSFET DRIVE 4606 Alps GMR sensor transistor 5503 dm logitech x 530
Contextual Info: Avago Technologies www.avagotech.com AVAGO TECHNOLOGIES EBV Elektronik GmbH & Co. KG www.ebv.com Оптоэлектронные и СВЧ компоненты «Аваго Текнолоджиз» АПРЕЛЬ ОПТОЭЛЕКТРОННЫЕ И СВЧ КОМПОНЕНТЫ «АВАГО ТЕКНОЛОДЖИЗ»

PD170V1

Abstract: SM 4151 terminal block aar osai
Contextual Info: Color Sensor SHARP E L E K / PD170V1 MELEC D I V PD170V1 • 2bE ì> B 0DG43n R. G. B. Color Sensor T BSRPJ r-w-sv O u tlin e D im e n s io n s F e a tu re s 1. 01007=10 U nit : m m C olor sensor with th ree photodiodes, sensi­ tive to the incident lights of th ree different

2088AB

Abstract: mhw 592 TC-30AG AN778 ierc heatsink RF 433 RR3 RF Power Modules 814a Aham-Tor SIL 1030
Contextual Info: Order this document MOTOROLA m by AN1040/D SEMICONDUCTOR h m m b APPLICATION NOTE A N 1040 M ounting Considerations fo r Power Semiconductors Prepared by Bill Roehr Staff Consultant, Motorola Semiconductor Sector TABLE OF CONTENTS In tro d u c tio n .

pin diagram of 741 op-amp

Abstract: 4151 vfc vfc 4151 transistor CQ 735 RC4151N 4151 RC3403A rc4151 application RC4151 741 comparator
Contextual Info: 4151 Voltage-to-Frequency Converter GENERAL DESCRIPTION DESIGN FEATURES Th e R C 4 1 5 1 and R M 4 1 5 1 provide a sim ple low -cost m ethod o f A / D conversion. T h e y have all the inherent advantages o f the voltage-to-frequency conversion technique. T h e o u tp u t o f