.WY TRANSISTOR Search Results

Contextual Info: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications  Alarm systems  Industrial equipment  Networking SOT23-5 WY  Medical equipment SC70-5, SOT323-5 (W8)  UPS (uninterruptible power supply) Features

vp1210n5

Contextual Info: VP12A fài Super te x inc. /p v P-Channel Enhancement-Mode Wy Vertical DMOS FETs Ordering Information Standard Commercial Devices I d ON (max) (min) TO-39 BVdgs t Order Number / Package ^ D S (O N ) DICEt -40V 0 .8 0 -6A VP1204N2 VP1204N5 VP1204ND -60V 0 .8 0

WY transistor

Abstract: sot23 WY transistor marking WY .wy transistor WG SOT 23 KTC3876 marking wo sot-23 TRANSISTOR MARKING CODE WO MARKING WY transistor wy
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Complementary To KTA1505. z Excellent HFE Linearity. z Low noise. KTC3876 Pb Lead-free APPLICATIONS z General purpose application, switching application. SOT-23

wy smd

Abstract: 2sc4118 MARKING WY
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4118 Features Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE: hFE=70-400 · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 3. COLLECTOR 1. 01 REF 1. 25¡ À0. 05 100 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 KTC4076 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR 1.01 REF 1.25±0.05 PCM: 100 mW (Tamb=25℃) 0.30 1.30±0.03 Collector current

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR PNP 1. BASE FEATURES z Complementary to KTC4379 z Small Flat Package z Low Saturation Voltage z Power Amplifier and Switching Application

WY transistor

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors KTA1666 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 1 W (Tamb=25℃) 2 3. EMITTER Collector current -2 A ICM: Collector-base voltage

KTC3876

Abstract: sot23 WY KTA1505
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3876 TRANSISTOR NPN FEATURES • High hFE · Complementary to KTA1505 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

Contextual Info: KTC3876 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 30 35

WY smd transistor

Abstract: smd transistor marking wy
Contextual Info: Transistors IC SMD Type Epitaxial Planar PNP Transistor KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 -0.1

marking wg

Abstract: WY smd hFE CLASSIFICATION Marking smd wg hFE CLASSIFICATION Marking CE 2SC2859 Marking WO smd sot23 marking wy
Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2859 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Excellent hFE linearity : hFE 2 = 25 (min) (VCE = 6 V, IC = 400 mA). 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1

Contextual Info: BCR139. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22 kΩ BCR139F/L3 BCR139T C 3 R1 1 B 2 E EHA07264 Type Marking Pin Configuration Package BCR139F WYs 1=B 2=E 3=C -

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors KTC4076 TRANSISTOR NPN FEATURES SOT–323  Excellent hFE Linearity  Complementary to KTA2015 APPLICATIONS  General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

MARKING WY SOT-89

Abstract: WY sot-89 KTA1666 transistor marking WY PLANAR TRANSISTOR WY Marking WO
Contextual Info: KTA1666 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5

WY smd transistor

Abstract: SMD TRANSISTOR MARKING wy
Contextual Info: Diodes IC Transistors Transistor T SMD Type Product specification KTA1666 SOT-89 • Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 ● Collector Power dissipation: PC=500mW +0.1 2.50-0.1 ● Collector Current -Continuous: IC=-2A 3 +0.1 0.53-0.1 +0.1 0.44-0.1

Contextual Info: KTA1666 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(Ta Rating Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5

analog multiplier MC1496

Abstract: AN531 MC1496 balanced modulator MC1496 operation theory application note AN489 AN489 Analysis and Basic Operation of the MC1595 MC1496 application note AN489 MC1496 AN531 MC1595
Contextual Info: AN531/D MC1496 Balanced Modulator Prepared by: Roy Hejhall Applications Engineering http://onsemi.com APPLICATION NOTE MC1496 General Description Figure 1 shows a schematic diagram of the MC1496. For purposes of the analysis, the following conventional assumptions have been made for simplification: 1 Devices

2sa15

Abstract: WY 549
Contextual Info: O rd e rin g n u m b e r: EN 2 1 6 6 iS A \Y O 2SA1521/2SC3915 No.2166 PNP/NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features

2SC3915

Abstract: 2SA1521 EN2166
Contextual Info: Ordering number:EN2166 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1521/2SC3915 Switching Applications with Bias Resistance Applications Package Dimensions • Swicthing circuits, inverter circuits, interface circuits, dirver circuits. unit:mm 2018A [2SA1521/2SC3915]

balanced modulator MC1496 theory

Abstract: balanced modulator MC1496 operation theory AM MODULATOR 1496 MC1496 application note balanced modulator MC1496 MC1496 balanced modulator theory MC1596 frequency doubler circuit MC1596K cascode transistor array VCO
Contextual Info: Philips Semiconductors Application note Balanced modulator/demodulator applications using the MC1496/1596 AN189 The transistors are connected in a cascode fashion. Therefore, sufficient collector voltage must be supplied to avoid saturation if linear operation is to be achieved. Voltages greater than 2V are

2SC5256

Abstract: 2SC5086 HN9C02FT VQE 11
Contextual Info: TO SHIBA TENTATIVE HN9C02FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C02FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES