.6A MARKING CODE Search Results
.6A MARKING CODE Equivalents
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.6A MARKING CODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 5446/BEA |
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5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) |
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| 54LS190/BEA |
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54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) |
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| 2910/BQA |
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2910 - Microprogram Controller - Dual marked (7801701QA) |
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| MQ80C186-12/BYA |
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80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) |
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| 54L04/BDA |
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54L04 - Hex Inverter - Dual marked (M38510/02005BDA) |
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.6A MARKING CODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
CMSH3-40
Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
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OCR Scan |
CMPS5064 BC846A BC846B BC847A BC847B CMPT5551 BC847C BC848A BC848B BC848C CMSH3-40 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE | |
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Contextual Info: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications: |
Original |
DSS6-0025BS 6Y025AS O-252 60747and 20131031b | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
Original |
DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS | |
DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
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DSEP6-06BS Recti10 60747and 20110915a DIODE MARKING CODE B3 DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2 | |
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Contextual Info: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips |
Original |
DSEP6-06BS 60747and 20110915a | |
6P060AS
Abstract: marking diode 6a
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Original |
DSEP6-06AS 6P060AS 60747and 20110915a 6P060AS marking diode 6a | |
6Y150AS
Abstract: 6Y150AS IXYS
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Original |
DSS6-015AS 6Y150AS O-252 60747and 20131031b 6Y150AS 6Y150AS IXYS | |
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Contextual Info: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak |
Original |
DSS6-0045AS 6Y045AS O-252 60747and 20131031b | |
a-316
Abstract: code diode transient ERA82-004 CV marking code diode transient A316 a316 j
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OCR Scan |
ERA82-004 a-316 code diode transient CV marking code diode transient A316 a316 j | |
6P060ASContextual Info: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips |
Original |
DSEP6-06AS 6P060AS 6-06AS 60747and 20110915a 6P060AS | |
CV marking code diode transient
Abstract: ERA82-004 a316 j
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OCR Scan |
ERA82-004 CV marking code diode transient a316 j | |
ERA82-004
Abstract: P151 T151 T810 T930 a316
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OCR Scan |
ERA82-004 l95t/R89 P151 T151 T810 T930 a316 | |
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Contextual Info: JRS300100 REV j ECIM I APP'D ~ 6299 U f i r T r - i f ^ HITE MARKING FONT SIZE 6 1.406 6a 3X 0 .2 0 0 DQ a Q m .625 .625 1.110 MIN 1.015 MAX 4X R.055 MAX RECOMMENDED PANEL CUT-OUT 1.74 MAX ATING SCREW PHILLIPS HEAD APTURED SPRING GASKET SUPPLIED WITH RELAY |
OCR Scan |
JRS300100 ASTM-D5205 JRS300101 JRS300110 JRS300111 pr-08 | |
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Contextual Info: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100 |
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BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BC847B | |
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SL106D
Abstract: SL210ND SL110AB AC125V SLN210K SL120D SL103A AC250V6A SL120A SLN210K-9
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OCR Scan |
SL103* SL103A SL106A SL106D AC125V SLN210K AC1000V DC500V) 150kQ SL210ND SL110AB SL120D AC250V6A SL120A SLN210K-9 | |
6A100Contextual Info: 6A05 - 6A100 CREAT BY ART Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode |
Original |
6A100 MIL-STD-202, 260/10s 300us 6A100 | |
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Contextual Info: 6A05 - 6A100 Pb 6.0 AMPS. Silicon Rectifiers R-6 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode |
Original |
6A100 MIL-STD-202, 300us | |
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Contextual Info: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode |
Original |
6A05G 6A100G MIL-STD-202, | |
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Contextual Info: 6A05G - 6A100G 6.0 AMPS. Glass Passivated Rectifiers R-6 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode |
Original |
6A05G 6A100G MIL-STD-202, 260/10s | |
mosfet 2g2
Abstract: H9926CTS H9926TS mark 6A N-channel code TS
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Original |
MOS200513 H9926TS H9926CTS V-10V) H9926CTS 183oC 217oC 260oC 245oC mosfet 2g2 mark 6A N-channel code TS | |
H9926CS
Abstract: H9926S
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Original |
MOS200508 H9926S H9926CS V-10V) H9926CS 200oC 183oC 217oC 260oC | |
transistor 6n60
Abstract: 6N60 H06N60F 06N60 H06N60 H06N60E H06N60U marking code 749 PB40 MOS200402
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Original |
MOS200402 H06N60 O-263 spee80 183oC 217oC 260oC H06N60U, H06N60E, transistor 6n60 6N60 H06N60F 06N60 H06N60E H06N60U marking code 749 PB40 MOS200402 | |
mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055
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Original |
MOS200702 H3055MJ H3055MJ O-252 V-10V) 10sec mosfet y1 MOSFET MARK y2 mosfet k 61 y1 y2 marking TL 434 mosfet sn60 ultra low idss H-3055 | |
mosfet y1
Abstract: MOSFET MARK y2 mosfet k 61 y1 TL 434 H3055LJ Y2 MARKING
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Original |
MOS200606 H3055LJ H3055LJ O-252 V-10V) 200oC 183oC 217oC 260oC 245oC mosfet y1 MOSFET MARK y2 mosfet k 61 y1 TL 434 Y2 MARKING | |