.22K 250 Search Results

NTE2357

Abstract: NTE2358
Contextual Info: NTE2357 NPN & NTE2358 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 22k Bias Resistors Features: D Built–In Bias Resistor (R1 = 22kΩ, R2 = 22kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit

DTA124EKA

Abstract: DTA124EEB DTA124EUB
Contextual Info: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 22k 22k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA124EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 22k.

Contextual Info: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 22k 22k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA124EM (SC-105AA) EMT3 Features 1) Built-In Biasing Resistors, R1 = R2 = 22k.

DTC124E

Contextual Info: DTC124E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA124E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTA024E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) -100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F -50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

Contextual Info: DTC024E series Datasheet NPN 100mA 50V Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter VCC Value IC(MAX.) 100mA R1 R2 22kΩ 22kΩ VMT3 EMT3F 50V l Features 1) Built-In Biasing Resistors, R1 = R2 = 22kΩ 2) Built-in bias resistors enable the configuration of

BCR191

Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
Contextual Info: BCR191./SEMB1 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

BCR141S

Abstract: BCR141 BCR141F BCR141L3 BCR141T bcr1 marking code wd
Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package

BCR141F

Abstract: BCR141 BCR141S BCR141U BCR141W BCW66 infineon marking code B2 SOT23 marking code TS
Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2 =22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package

BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Contextual Info: BCR141./SEMH1 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR191

Abstract: BCR191F BCR191L3 BCR191S BCR191T BCR191W
Contextual Info: BCR191. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

BCR141

Abstract: BCR141F BCR141L3 BCR141S BCR141T
Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Contextual Info: BCR191./SEMB1 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching

ksr1003 transistor

Contextual Info: KSR1003 KSR1003 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=22KΩ, R2=22KΩ) • Complement to KSR2003 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit

VPS05604

Contextual Info: BCR 191S PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) 2 3

564 sot363

Contextual Info: SIEMENS BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22k£2, R2=22k£i) Tape loading orientation

KSR1203

Abstract: KSR2203
Contextual Info: KSR2203 KSR2203 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =22KΩ, R2=22KΩ) • Complement to KSR1203 TO-92S 1 1.Emitter 2. Collector 3. Base Equivalent Circuit

Contextual Info: BCR141./SEMH1 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package

Q62702-C2418

Contextual Info: BCR 191S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type Marking Ordering Code Pin Configuration

Contextual Info: BCR141. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R2=22kΩ • BCR141S / U: Two internally isolated transistors with good matching in one multichip package BCR141/F/L3

141S

Abstract: Q62702-C2416
Contextual Info: BCR 141S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface, driver circuit • Two galvanic internal isolated Transistors in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Type Marking Ordering Code Pin Configuration

c2375

Abstract: pnp array transistor Common emitter configuration Q62702-C2375 marking WPs
Contextual Info: BCR 22PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (R1=22kΩ, R2=22kΩ) Tape loading orientation

DSA0037427

Contextual Info: SEMH1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated Transistors 5 3 with good matching in one package 6 2 • Built in bias resistor (R1=22kΩ, R2 =22kΩ)