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Q100.14x20 Package
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Intersil
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100 LEAD METRIC PLASTIC QUAD FLATPACK PACKAGE |
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17.29KB |
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Q1003M4
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Unknown
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Short Form Datasheet and Cross Reference Data |
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73.35KB |
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Q100-48-5
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Broadband TelCom Power
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DC-to-DC Power Supply Module |
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666.46KB |
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Q1004L4
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Unknown
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Short Form Datasheet and Cross Reference Data |
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94.81KB |
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10SQ100
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AK Semiconductor
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Schottky Barrier Rectifiers in R-6 package with reverse voltage ratings from 30 to 100 V, forward current rating of 10 A, low forward voltage drop, high surge current capability, and lead-free design compliant with RoHS directives. |
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JMTQ100P03A
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET with -30V drain-source voltage, -40A continuous drain current, and RDS(on) less than 9.4mΩ at VGS=-10V, available in PDFN3x3-8L package. |
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80SQ100
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SUNMATE electronic Co., LTD
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Schottky barrier diode in DO-201AD package with 8.0 A average forward rectified current, 30–100 V maximum DC blocking voltage, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150 °C.Schottky barrier diode in DO-201AD package with 8.0 A average forward rectified current, 30–100 V maximum DC blocking voltage, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150 °C.Schottky barrier diode in DO-201AD package with 8.0 A average forward rectified current, 30–100 V maximum DC blocking voltage, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150 °C.Schottky barrier diode in DO-201AD package with 8.0A average forward current, voltage range 30–100V, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150°C.Schottky barrier diode in DO-201AD package with 8.0 A average forward rectified current, 30–100 V maximum recurrent peak reverse voltage, low forward voltage, high surge capacity, and operating junction temperature range of -55 to +150 °C.Schottky barrier diode in DO-201AD package with 8.0A average forward rectified current, 30–100V maximum reverse voltage, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150°C. |
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JMTQ100N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 25A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 11.2mΩ at VGS=10V, available in PDFN3x3-8L package, suitable for load switching, PWM, and power management applications. |
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90SQ100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode with 30 to 100V maximum DC blocking voltage, 9.0A average forward current, low forward voltage, high surge capacity, and plastic package rated UL 94V-0, suitable for high efficiency power applications.Schottky barrier rectifier diode with 30 to 100V maximum DC blocking voltage, 9.0A average forward rectified current, low forward voltage, high surge capacity, and plastic package rated UL 94V-0, operating junction temperature from -55 to +150°C.Schottky barrier rectifier diode with 30 to 100V maximum DC blocking voltage, 9.0A average forward current, low forward voltage, high surge capacity, and plastic package rated UL 94V-0, operating junction temperature from -55 to +150°C. |
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20MQ100
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode VS-20MQ100-M3 in SMA package, with 100 V maximum DC reverse voltage, 2 A average forward current, 120 A peak surge current, low forward voltage drop, and operating junction temperature from -55 to 150 °C. |
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12SQ100
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AK Semiconductor
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Schottky Barrier Rectifiers in R-6 package with reverse voltage ratings from 30 to 100 V, forward current of 12 A, low forward voltage drop, and high surge current capability up to 225 A. |
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10SQ100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode with 10.0 A average forward current, 30 to 100 V reverse voltage range, low forward voltage, high surge capacity, and operating junction temperature from -55 to +150 °C. |
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15SQ100
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SUNMATE electronic Co., LTD
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15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15A average forward current, 30-100V reverse voltage range, low forward voltage, high surge capacity, and operating temperature from -55 to +200°C.15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15A average forward current, 30-100V reverse voltage range, low forward voltage, high surge capacity, and operating temperature from -55 to +200°C.15SQ030 - 15SQ100 Schottky barrier rectifier diodes with 15 A average forward rectified current, 30 to 100 V maximum recurrent peak reverse voltage, low forward voltage, high surge capacity, and operating junction temperature range from -55 to +200 °C.15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15 A average forward current, 30-100 V reverse voltage range, low forward voltage, high surge capacity, and operating junction temperature from -55 to +200 °C.15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15 A average forward current, 30-100 V reverse voltage range, low forward voltage, high surge capacity, and operating junction temperature from -55 to +200 °C.15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15 A average forward rectified current, 30-100 V maximum DC blocking voltage, low forward voltage, high surge capacity, and operating temperature range from -55 to +200 °C.15SQ030-15SQ100 Schottky barrier rectifier diodes feature 15 A average forward current, 30-100 V reverse voltage range, low forward voltage, high surge capacity, and operating temperature from -55 to +200 °C. |
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15SQ100
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AK Semiconductor
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Schottky Barrier Rectifiers in R-6 package with reverse voltage ratings from 30 to 100 V, forward current rating of 15 A, low forward voltage drop, and high surge current capability up to 250 A. |
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50SQ100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diodes in DO-201AD package, 5.0A average rectified current, 30 to 100V peak repetitive reverse voltage, low forward voltage, high surge current capability, suitable for high frequency inverters and polarity protection applications. |
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12SQ100
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode with 12A average forward current, 30-100V maximum DC blocking voltage, low forward voltage, high surge capacity, and operating junction temperature from -55 to +200°C. |
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10MQ100
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode 10MQ100 with SMA/DO-214AC package, 1.0 A average rectified current, 100 V DC blocking voltage, low forward voltage drop, and operating temperature range from -65 to +125 °C.Surface mount Schottky barrier diode in SMA/DO-214AC package, 1.0 A average rectified current, 30 to 100 V DC blocking voltage, low forward voltage drop, rated for operating junction temperature from -65 to +125°C. |
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10MQ100N
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Shenzhen Heketai Electronics Co Ltd
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10MQ100N Schottky barrier diode in SMA package, 100 V maximum recurrent peak reverse voltage, 2.1 A maximum average forward rectified current, low forward voltage drop, surface mount device for industrial applications. |
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JMTQ100N04A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 30A N-channel enhancement mode power MOSFET in PDFN3x3-8L package with RDS(ON) less than 11.1mΩ at VGS=10V and 14.7mΩ at VGS=4.5V, featuring advanced trench technology for efficient power management applications. |
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10SQ100
