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P301
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Stag Programmers
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Device Support List |
Original |
PDF
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35.29KB |
9 |
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P3010
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Global Components & Controls
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High reliability photocoupler. |
Original |
PDF
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118.4KB |
5 |
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P3010
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Unknown
|
Shortform Semicon, Diode, and SCR Datasheets |
Short Form |
PDF
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133.05KB |
1 |
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P3010
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Silec Semiconductors
|
Shortform Data Book 1976 |
Short Form |
PDF
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54.71KB |
1 |
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P3010R
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Silec Semiconductors
|
Shortform Data Book 1976 |
Short Form |
PDF
|
54.71KB |
1 |
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P30/120
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Semikron
|
For stud devices |
Original |
PDF
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131KB |
3 |
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P-30158-30
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Littelfuse
|
CIRCUIT BREAKER 30A TYPE 1 |
Original |
PDF
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154.67KB |
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P30/170
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Semikron
|
For stud devices |
Original |
PDF
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130.99KB |
3 |
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P30/19-3C91
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Ferroxcube
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Magnetics - Transformer, Inductor Components - Ferrite Cores - FERRITE CORE 2PC SET |
Original |
PDF
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82.04KB |
|
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P30/19-3C95
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Ferroxcube
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Magnetics - Transformer, Inductor Components - Ferrite Cores - P CORES 2PC SET |
Original |
PDF
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82.04KB |
|
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P30/19-3F36
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Ferroxcube
|
Magnetics - Transformer, Inductor Components - Ferrite Cores - P CORES 2PC SET |
Original |
PDF
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82.04KB |
|
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P30/19-3F46
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Ferroxcube
|
Magnetics - Transformer, Inductor Components - Ferrite Cores - FERRITE CORE 2PC SET |
Original |
PDF
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82.04KB |
|
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P301-EU
|
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Stag Programmers
|
P301 - Device Support List |
Original |
PDF
|
35.29KB |
9 |
GBP301
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JCET Group
|
3A plastic-encapsulated bridge rectifier with repetitive peak reverse voltage from 50V to 1000V, high surge current capability, and operating junction temperature from -55°C to +150°C. |
Original |
PDF
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IRP3012Q24-E5
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CT Micro International Corporation
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SMD type 940nm infrared emitter with peak wavelength of 940nm, radiant intensity of 6.5 to 38 mW/sr at 20mA to 70mA forward current, viewing angle of ±22.5 degrees on X axis, and RoHS compliance. |
Original |
PDF
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KBP301G
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Shenzhen Heketai Electronics Co Ltd
|
Glass passivated bridge rectifier with reverse voltage ratings from 50 to 1000 volts and forward current rating of 3.0 amperes, featuring surge overload protection up to 60 amperes peak, suitable for printed circuit board applications. |
Original |
PDF
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HIRP3010Q20-B30
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|
CT Micro International Corporation
|
SMD type 850nm infrared emitter with peak wavelength of 850nm, radiant intensity of 1.0 to 7.0 mW/sr, viewing angle ±65 degrees, and forward voltage of 1.30 to 1.56V, designed for infrared sensing and light barrier applications. |
Original |
PDF
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IRP3015W12-J5
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CT Micro International Corporation
|
SMD type 940nm infrared emitter with GaAlAs LED, peak wavelength at 940nm, radiant intensity of 4.0 to 8.0 mW/sr at 20mA, viewing angle ±42.5 degrees, and RoHS compliant. |
Original |
PDF
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HSP3014
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Huashuo Semiconductor
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HSP3014 is a high cell density trenched N-channel MOSFET with 30 V drain-source voltage, 53 A continuous drain current, and 12 mΩ typical on-resistance at VGS = 10 V, suitable for synchronous buck converters. |
Original |
PDF
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GBP301