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    -P12T Datasheets (8)

    AK Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge AKP12T11
    		AK Semiconductor N-Channel Super Trench Power MOSFET AKP12T11 with 120V drain-source voltage, 108A continuous drain current, 6.6mΩ typical RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP12T18D
    		AK Semiconductor N-Channel Super Trench MOSFET with 120V drain-source voltage, 180A continuous drain current, 3.0mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP12T15
    		AK Semiconductor N-Channel Super Trench Power MOSFET AKP12T15 with 120V VDS, 150A ID, RDS(on) less than 4.2mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. Original PDF
    badge AKP12T13A
    		AK Semiconductor N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 130A continuous drain current, 4.6mΩ maximum RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP12T12
    		AK Semiconductor N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 129A continuous drain current, 5.3mΩ maximum RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP12T12D
    		AK Semiconductor N-Channel Super Trench Power MOSFET AKP12T12D with 120V drain-source voltage, 129A continuous drain current, 5.3mΩ RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification. Original PDF
    badge AKP12T10F
    		AK Semiconductor N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 100A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge AKP12T10
    		AK Semiconductor N-Channel Super Trench MOSFET with 120V drain-source voltage, 100A continuous drain current, 6.8mΩ typical RDS(on) at VGS=10V, 55nC total gate charge, and 175°C maximum operating temperature. Original PDF
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    -P12T Price and Stock

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    Glenair Inc 557T246M3P12T

    EMI/RFI Banding Backshell Assembly Shell Size 3 for MIL-DTL-24308 D-Subminiature Connectors - Bulk (Alt: 557T246M3P12T)
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    Avnet Americas 557T246M3P12T Bulk 3 Weeks 1
    • 1 $1930.92
    • 10 $1043.69
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    Mouser Electronics 557T246M3P12T
    • 1 $1988.17
    • 10 $1711.40
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    Newark 557T246M3P12T Bulk 1
    • 1 $2039.06
    • 10 $1190.31
    • 100 $817.69
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    Interstate Connecting Components 557T246M3P12T
    • 1 $2151.60
    • 10 $1141.83
    • 100 $754.96
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    Powell Electronics 557T246M3P12T 1 1
    • 1 $1983.82
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    FDH Electronics 557T246M3P12T
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    Vishay Intertechnologies P12TABX473KAB2

    Rotary Potentiometer, Cermet, 47 kOhm, 1Turn, Linear, 1 W, ? 10% - Boxed Product (Development Kits) (Alt: P12TABX473KAB2)
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    Avnet Americas P12TABX473KAB2 Box 12 Weeks 35
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    • 1000 $28.58
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    Diodes Incorporated AP2132UMP-1.2TRG1

    - Tape and Reel (Alt: AP2132UMP-1.2TRG1)
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    Avnet Americas AP2132UMP-1.2TRG1 Tape & Reel 4,000
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    Vishay Intertechnologies P12TAJY102MLB1

    Rotary Potentiometer, Cermet, 1 kOhm, 1Turn, Logarithmic, 500 mW, ? 20% - Boxed Product (Development Kits) (Alt: P12TAJY102MLB1)
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    Avnet Americas P12TAJY102MLB1 Box 12 Weeks 15
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    • 100 $33.44
    • 1000 $32.02
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    Vishay Intertechnologies P12TAJY103MAB1

    Rotary Potentiometer, Cermet, 10 kOhm, 1Turn, Linear, 1 W, ? 20% - Boxed Product (Development Kits) (Alt: P12TAJY103MAB1)
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    Avnet Americas P12TAJY103MAB1 Box 12 Weeks 15
    • 1 -
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    • 100 $30.92
    • 1000 $29.82
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