CJ3139KW
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JCET Group
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Single P-Channel Power MOSFET with -20V drain-source voltage, -0.66A continuous drain current, 430mΩ max RDS(on) at VGS = -4.5V, and SOT-323 package for high-side switching and load power applications. |
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CJ3139KDW
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JCET Group
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Dual P-Channel Power MOSFET in SOT-363 package with -20V drain-source voltage, -0.66A continuous drain current, low on-resistance of 430mΩ at VGS=-4.5V, and fast switching speed for high-side load switching applications. |
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CJ3134KW
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JCET Group
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N-channel MOSFET in SOT-323 package with 20V drain-source voltage, 0.75A continuous drain current, and on-resistance of 380mΩ at 4.5V gate-source voltage. |
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CJ3134KDW
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JCET Group
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Dual N-Channel MOSFET in SOT-363 package, 20V drain-source voltage, 0.75A continuous drain current, low RDS(on) of 380mΩ at 4.5V VGS, suitable for load switching and battery management in portable electronics. |
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CJ3134K
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JCET Group
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N-channel MOSFET in SOT-23 package with 20 V drain-source voltage, 0.75 A continuous drain current, and low on-resistance of 380 mΩ at 4.5 V gate drive, suitable for power switching and portable electronics applications. |
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CJ3134K KF
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JCET Group
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N-channel MOSFET in SOT-723 package with 20V drain-source voltage, 0.75A continuous drain current, and low RDS(on) of 380mΩ at 4.5V gate drive, suitable for load switching and portable electronics applications. |
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CJ3139K
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JCET Group
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P-Channel MOSFET in SOT-23 surface mount package with -20 V drain-source voltage, -0.66 A continuous drain current, low RDS(on) of 430 mΩ at VGS = -4.5 V, and suitable for low logic level gate drive applications. |
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CJ3139KA
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JCET Group
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P-Channel MOSFET in SOT-723 package with -20 V drain-source voltage, -0.66 A continuous drain current, 150 mW power dissipation, and low RDS(on) for surface mount applications. |
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CJ3134KW-HAF
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JCET Group
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N-Channel MOSFET in SOT-323 package with 20V drain-source voltage, 0.75A continuous drain current, and on-resistance of 380mΩ at 4.5V gate-source voltage. |
Original |
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CJ3139KW
