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H0600KC180
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Westcode Semiconductors
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Gate Turn Off Thyristors - Capsule Type |
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22.56KB |
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H060XHXS
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Knowles Dielectric Labs
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Filters - RF Filters - HIGHPASS FILTER |
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254.59KB |
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JMSH0605AGD
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Jiangsu JieJie Microelectronics Co Ltd
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60 V, 54 A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10 V VGS, low gate charge, and 100% UIS tested for power management and motor driving applications. |
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JMSH0601ATLQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package, featuring 328A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for automotive applications. |
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JMSH0606AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 95A N-channel Power MOSFET in TO-252-3L package with 4.4 mΩ RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH0606AU
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Jiangsu JieJie Microelectronics Co Ltd
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60 V, 62 A N-channel Power MOSFET in PDFN3x3-8L package with 4.6 mΩ typical RDS(ON) at 10 V VGS, featuring low gate charge and high avalanche energy rating for power management and motor driving applications. |
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JMSH0602AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in PDFN5x6-8L package with 1.9 mΩ typical RDS(ON) at 10 V VGS, 168 A continuous drain current, and low gate charge, suitable for high-efficiency power applications. |
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JMSH0602AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.9mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 175A continuous drain current, low gate charge, and ultra-low on-resistance, suitable for power management and motor driving applications. |
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JMSH0601ATL
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.2mΩ TOLL N-Ch Power MOSFET in PowerJE®10x12 package with 348A continuous drain current, low gate charge, and ultra-low ON-resistance for power management and switching applications. |
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JMSH0601AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.4mΩ N-Ch Power MOSFET in PDFN5x6-8L package, with 197A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
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JMSH0603PK
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 83A, 2.8mΩ N-channel Power SGT MOSFET in TO-252-3L package with low gate charge, excellent RDS(ON), and 100% UIS tested, suitable for load switch, PWM, and power management applications. |
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JMSH0606AG
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET with 3.7 mΩ RDS(ON) at 10V VGS, 98A continuous drain current, PDFN5x6-8L package, suitable for power management, motor driving, and switching applications in industrial and consumer systems. |
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JMSH0605AGDQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V 56A N-channel Power MOSFET in PDFN5x6-8L-D package with 4.7 mΩ typical RDS(ON) at 10V VGS, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH0606AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in PDFN5x6-8L package with 3.7 mΩ RDS(ON) at 10V VGS, 103A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0606AK
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Jiangsu JieJie Microelectronics Co Ltd
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60V 90A N-channel Power MOSFET with 4.4 mΩ RDS(ON) at 10V VGS, TO-252-3L package, suitable for power management, motor driving, and switching applications. |
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JMSH0601AGQ
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-Ch Power MOSFET in PDFN5x6-8L package with 1.3 mΩ typical RDS(ON) at 10 V VGS, 225 A continuous drain current, and 81 nC total gate charge, suitable for automotive applications. |
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JMSH0602AE
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET with 1.8 mΩ typical RDS(ON) at 10 V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 195 A maximum drain current, and 100% UIS tested reliability. |
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JMSH0602AC
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 1.8mΩ N-channel Power MOSFET in TO-220-3L and TO-263-3L packages, with 195A continuous drain current, low gate charge, and ultra-low on-resistance for power management and switching applications. |
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JMSH0602PG
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Jiangsu JieJie Microelectronics Co Ltd
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60V 1.6mΩ N-Ch Power MOSFET in PDFN5x6-8L package with 200A pulsed drain current, low gate charge, and ultra-low RDS(ON), suitable for power management and switching applications. |
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JMSH0603PG
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Jiangsu JieJie Microelectronics Co Ltd
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60V, 118A, 2.1mΩ N-channel Power SGT MOSFET in PDFN5x6-8L package with low on-resistance, high current capability, and optimized gate charge for power management and load switch applications. |
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JMSH0605AGD
