|
S1880
|
|
Hamamatsu
|
Two-dimensional PSD Non-discrete position sensor utilizing photodiode surface resistance |
Original |
PDF
|
134.93KB |
4 |
|
S1880
|
|
Unknown
|
POSITION SENSITIVE DETECTOR |
Original |
PDF
|
1.31MB |
16 |
|
S1881
|
|
Unknown
|
POSITION SENSITIVE DETECTOR |
Original |
PDF
|
1.31MB |
16 |
|
S1883AC
|
|
Unknown
|
IC Datasheet (Short Description and Cross Reference Only) |
Scan |
PDF
|
160.57KB |
2 |
|
S1883AP
|
|
Unknown
|
IC Datasheet (Short Description and Cross Reference Only) |
Scan |
PDF
|
160.57KB |
2 |
|
S1883C
|
|
Unknown
|
IC Datasheet (Short Description and Cross Reference Only) |
Scan |
PDF
|
160.57KB |
2 |
|
S1883P
|
|
Unknown
|
IC Datasheet (Short Description and Cross Reference Only) |
Scan |
PDF
|
160.56KB |
2 |
1S1888
|
|
SUNMATE electronic Co., LTD
|
Plastic silicon rectifier diodes 1S1885–1S1888 feature low forward voltage drop, high current capability, and low leakage, with maximum recurrent peak reverse voltage from 400V to 600V, average forward rectified current of 1.0A, and surge current up to 20A. |
Original |
PDF
|
|
|
|
1S1887
|
|
SUNMATE electronic Co., LTD
|
Plastic silicon rectifier diodes 1S1885–1S1888 feature low forward voltage drop, high current capability, low leakage, and a JEDEC DO-15 molded plastic case with axial leads, rated for 100–600V DC blocking voltage and 1.0A average forward current. |
Original |
PDF
|
|
|
|
1S1886
|
|
SUNMATE electronic Co., LTD
|
Plastic silicon rectifier diodes 1S1885–1S1888 feature low forward voltage drop, high current capability, and low leakage; rated for 200–600V reverse voltage, 1.0A average forward current, and operate within -55 to +150°C junction temperature range. |
Original |
PDF
|
|
|
|
1S1885
|
|
SUNMATE electronic Co., LTD
|
Plastic silicon rectifier diodes 1S1885–1S1888 feature low forward voltage drop, high current capability, and low leakage; rated for 200–600V reverse voltage, 1.0A average forward current, and operate within -55 to +150°C junction temperature range. |
Original |
PDF
|
|
|
1S1888
