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R140-045-000R
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Hammond Manufacturing
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Box Accessories, Boxes, Enclosures, Racks, ADAPTOR SLOPE 30/60DEG INCLINE |
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R1400-KIT2
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REED Instruments
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ELECTRODE MAINTENANCE KIT |
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R1401C2NBB
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APEM Components
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Rocker Switches, Switches, SWITCH ROCKER SPST-NO 20A 125V |
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MUR140
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SUNMATE electronic Co., LTD
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Super fast rectifier diode in DO-41 package, 1.0 A average forward current, 50 to 600 V reverse voltage range, 1.25 V max forward voltage at 1.0 A, 100 A peak surge current, axial leads, operating junction temperature from -55 to +150 °C. |
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CWS55R140AF
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Wuhan Xinyuan Semiconductor Co Ltd
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550V N-Channel Super Junction MOSFET with 140 mOhm RDS(on) and 25A continuous drain current in TO-220, TO-220F, and TO-247 packages, designed for high-efficiency power applications. |
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DFLR1400
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SUNMATE electronic Co., LTD
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Surface mount silicon rectifier diode in SOD-123FL package, 1.0 A average rectified current, 200 to 600 V peak repetitive reverse voltage, low forward voltage of 1.1 V at 1.0 A, operating temperature from -65 to +150 °C. |
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MUR140
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Microdiode Semiconductor
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200-600V, 1.0A, ultra fast, low leakage, high surge, 250°C/10s, DO-41 |
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SR140
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AK Semiconductor
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Schottky Barrier Rectifier in DO-41 package with reverse voltage ratings from 20 to 200 V, forward current of 1 A, low forward voltage drop, and surge current capability up to 30 A. |
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MUR140S
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Jiangsu JieJie Microelectronics Co Ltd
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Super fast recovery rectifier in DO-214AC (SMA) surface mount package, with 400V or 600V maximum repetitive peak reverse voltage, 1A average forward current, 30A peak forward surge current, and 50ns reverse recovery time. |
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SR140
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SUNMATE electronic Co., LTD
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Schottky Barrier Rectifier Diode in DO-41 package, 1.0A average rectified current, 20-100V DC blocking voltage, low forward voltage drop, high surge current capability, operating temperature -65 to +150°C. |
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MUR140SB
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Jiangsu JieJie Microelectronics Co Ltd
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Super fast recovery rectifier in DO-214AA (SMB) surface mount package with 400V or 600V maximum repetitive peak reverse voltage, 1A average forward current, 30A peak forward surge current, and 50ns reverse recovery time. |
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MBR140F
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SUNMATE electronic Co., LTD
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Surface mount Schottky barrier diode MBR120F with 20V reverse voltage, 1.0A average forward current, low forward voltage drop of 0.70V, and high surge current capability in SMAF package. |
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2R1400-4S
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SUNMATE electronic Co., LTD
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2R-4S series gas discharge tube with 2 electrodes, SMD lead type, 4.2x4.0mm size, DC spark-over voltage 75-2000V, low capacitance below 1pF, high insulation resistance, and surge current capability up to 5kA.2RXX-4S series gas discharge tubes feature 2 electrodes, SMD lead type, dimensions of 4.2x4.0mm, DC spark-over voltage from 75 to 2000V, low capacitance below 1pF, high insulation resistance, and surge current capability up to 5kA.2RXX-4S series gas discharge tubes feature 2 electrodes, SMD lead type, dimensions of 4.2x4.0mm, DC spark-over voltage from 75 to 2000V, low capacitance below 1pF, high insulation resistance, and surge current capability up to 5kA. |
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CWS50R140AF
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Wuhan Xinyuan Semiconductor Co Ltd
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500V N-Channel Super Junction MOSFET with 140 mOhm RDS(on) and 25A continuous drain current, available in TO-220, TO-220F, and TO-247 packages for high-efficiency power applications. |
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MBR140SF
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Shikues Semiconductor
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SR140
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Microdiode Semiconductor
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Schottky barrier rectifier, reverse voltage 20-200V, forward current 1.0A, UL 94V-0, DO-41 package, solderable per MIL-STD-750, 0.33g. |
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CWS55R140BF
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Wuhan Xinyuan Semiconductor Co Ltd
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550V N-Channel Super Junction MOSFET with 140 mOhm RDS(on) and 25A continuous drain current, suitable for high-efficiency power applications including PFC, SMPS, UPS, adapters, and LED lighting. |
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SLF50R140SJ
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Maplesemi
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500V N-Channel MOSFET with 25A continuous drain current, 0.12 ohm typical RDS(on) at VGS = 10V, low gate charge of 70nC, and high avalanche ruggedness, suitable for fast switching power conversion applications. |
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MUR140
