AKP12T11
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP12T11 with 120V drain-source voltage, 108A continuous drain current, 6.6mΩ typical RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP12T10F
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 100A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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AKP12T10
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AK Semiconductor
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N-Channel Super Trench MOSFET with 120V drain-source voltage, 100A continuous drain current, 6.8mΩ typical RDS(on) at VGS=10V, 55nC total gate charge, and 175°C maximum operating temperature. |
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AKP12T12
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 129A continuous drain current, 5.3mΩ maximum RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP12T18D
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AK Semiconductor
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N-Channel Super Trench MOSFET with 120V drain-source voltage, 180A continuous drain current, 3.0mΩ RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP12T15
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP12T15 with 120V VDS, 150A ID, RDS(on) less than 4.2mΩ at VGS=10V, optimized for high-frequency switching and synchronous rectification. |
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AKP12T13A
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 130A continuous drain current, 4.6mΩ maximum RDS(on) at 10V VGS, suitable for high-frequency switching and synchronous rectification applications. |
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AKP12T12D
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AK Semiconductor
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N-Channel Super Trench Power MOSFET AKP12T12D with 120V drain-source voltage, 129A continuous drain current, 5.3mΩ RDS(ON) at 10V VGS, suitable for high-frequency switching and synchronous rectification. |
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