VS4622DE
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VANGUARD
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40V/14A dual N-channel advanced power MOSFET in PDFN3333 package with typical RDS(on) of 15 mΩ at VGS=10V, designed for high-efficiency power management applications. |
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VS3622DP3
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VANGUARD
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30V/40A dual N-channel power MOSFET with 8.7 mΩ typical on-resistance at 10 V gate-source voltage, 5 V logic level compatible, in PDFN5x6 package, designed for high-efficiency switching applications. |
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VS3622DP
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VANGUARD
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30V/40A dual N-channel advanced power MOSFET with 8.7 mOhm typical RDS(on) at VGS=10V, 12 mOhm at VGS=4.5V, available in PDFN5x6 package, suitable for 5V logic level control and high-efficiency power management applications. |
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VS3622DE
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VANGUARD
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30V/35A dual N-channel Advanced Power MOSFET with 10 mΩ typical RDS(on) at VGS=10V, 14 mΩ at VGS=4.5V, in a PDFN3333 package, suitable for 5V logic level control and high-efficiency power management applications. |
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VS3622DB
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VANGUARD
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30V dual asymmetric N-channel MOSFET in DFN3x3 package with low on-resistance of 8.2 mΩ (Q1) and 6 mΩ (Q2) at VGS=10V, high current capability up to 30A, and RoHS-compliant lead-free plating. |
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VS3622DP2
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VANGUARD
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30V/42A Dual Asymmetric N-Channel Advanced Power MOSFET with RDS(on) of 7.5 mΩ at VGS=10V, 11 mΩ at VGS=4.5V, in PDFN5x6 package, suitable for 5V logic level control and high-efficiency switching applications. |
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VS3622DS
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VANGUARD
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30V/12A Dual N-Channel Advanced Power MOSFET with 10 mΩ RDS(on) at VGS=10V, 14 mΩ at VGS=4.5V, SOP8 package, Pb-free and RoHS compliant, suitable for 5V logic level control applications. |
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VS4622DE
