JMSL0615AP
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Jiangsu JieJie Microelectronics Co Ltd
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60V N-channel Power MOSFET in SOP-8L package with 10 mΩ typical RDS(ON) at VGS = 10V, 12.7A continuous drain current, low gate charge, and designed for power management and switching applications. |
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JMSL0615AV
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Jiangsu JieJie Microelectronics Co Ltd
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60 V N-channel Power MOSFET in U-DFN2020-6L package with 9.8 mΩ RDS(ON) at 10 V VGS, 21 A continuous drain current, and low gate charge for power management applications. |
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JMSL0615AGDQ
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-Ch Power MOSFET with 60 V drain-source voltage, 33 A continuous drain current, 10.5 mΩ typical RDS(ON) at 10 V VGS, and 13.5 mΩ at 4.5 V VGS in a PDFN5x6-8L-D package. |
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JMSL0615AGD
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Jiangsu JieJie Microelectronics Co Ltd
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60 V dual N-channel power MOSFET in PDFN5x6-8L-D package with 10.5 mΩ typical RDS(ON) at 10 V VGS, 31 A continuous drain current, and low gate charge for power management applications. |
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JMSL0615AUD
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Jiangsu JieJie Microelectronics Co Ltd
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Dual N-Ch Power MOSFET with 60 V drain-source voltage, 24 A continuous drain current, 11.0 mΩ typical RDS(ON) at VGS = 10V, and 14.0 mΩ at VGS = 4.5V, housed in a PDFN3x3-8L-D package. |
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JMSL0615APD
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Jiangsu JieJie Microelectronics Co Ltd
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60V dual N-channel power MOSFET in SOP-8L package with typical RDS(ON) of 12 mΩ at VGS = 10V, low gate charge, and designed for power management and switching applications. |
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JMSL0615AP
