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60G
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Unknown
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Shortform Data and Cross References (Misc Datasheets) |
Short Form |
PDF
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33.77KB |
1 |
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60GB4F
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Switchcraft
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Connector: Audio Connector: RCP: 4: THRU |
Original |
PDF
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63.4KB |
3 |
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60GB4F
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Switchcraft
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Circular Connectors, Connectors, Interconnects, CONN RCPT 4CONT DIN SLD PNL MNT |
Original |
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333 |
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60GC15
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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96.12KB |
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60GC15
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Toshiba
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Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs |
Scan |
PDF
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102.99KB |
2 |
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60GK0KS-010
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Rosenberger
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Test and Measurement - Equipment - Specialty - 7/16 GAUGE KIT |
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105.39KB |
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60GWJ11
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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84.22KB |
2 |
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60GWJ2C11
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Unknown
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The Diode Data Book with Package Outlines 1993 |
Scan |
PDF
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94.84KB |
2 |
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60GWJ2C11
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Toshiba
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Rectifier Stack (Schottky Barrier Diode Stack) |
Scan |
PDF
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36.98KB |
1 |
RB060M-60G
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Shikues Semiconductor
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Surface Mount Schottky Rectifier, 30-60V, 2.0A, SOD-123FL, low power loss, high efficiency, surge current capability. |
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NCEAP018N60GU
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NCEPOWER
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NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. |
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NCE30P60G
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NCEPOWER
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NCE30P60G is a P-channel enhancement mode power MOSFET with -30V drain-source voltage, -60A continuous drain current, and low on-resistance of 4.1mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency and thermal performance. |
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NCE0160G
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NCEPOWER
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NCE0160G N-channel enhancement mode power MOSFET with 100V drain-source voltage, 60A continuous drain current, and 16mΩ typical RDS(ON) at 12.6V gate-source voltage, suitable for high-frequency switching applications. |
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CBM79AD60G
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COREBAI
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18-bit, 5 MSPS SAR analog-to-digital converter with ±VREF differential input range, LVDS serial interface, 99 dB SNR, 120 dB SFDR, and 64.5 mW power consumption in a 32-pin QFN package. |
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NCEAP60ND60G
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NCEPOWER
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NCEAP60ND60G is an automotive-grade N-channel Super Trench power MOSFET with 60 V drain-source voltage, 70 A continuous drain current, 7.8 mΩ typical RDS(on) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. |
Original |
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RB060M-60G
