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3A100
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RPM Micro
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3.0A Iout, 100V Vrrm General Purpose Silicon Rectifier |
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47.84KB |
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3A1000
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RPM Micro
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3.0A Iout, 1.0kV Vrrm General Purpose Silicon Rectifier |
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47.84KB |
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3A100 A0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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3A100 B0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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3A100H
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Taiwan Semiconductor
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DIODE GEN PURP 3A DO204AC |
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388.26KB |
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3A100HA0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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3A100HB0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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3A100HR0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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3A100 R0G
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Taiwan Semiconductor
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE GEN PURP 3A DO204AC |
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171.81KB |
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NSH03A10
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SUNMATE electronic Co., LTD
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NSH03A10 surface mount Schottky barrier diode with 100V repetitive peak reverse voltage, 3.0A average rectified output current, low forward voltage drop, high surge capability, and SMA/DO-214AC package. |
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CS-0603A-10N
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JWD
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Wire wound chip inductor in 0603 size with inductance from 1.5nH to 560nH, Q up to 40, self-resonant frequency up to 12.5GHz, rated current up to 700mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%.Wire wound chip inductor in 0603 size with inductance from 1.5 nH to 560 nH, Q values up to 40, self-resonant frequency up to 12.5 GHz, rated current up to 700 mA, and tolerance options from ±2% to ±20%. |
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