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25F05
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Solid State
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DIODE GEN PURP 50V 25A DO4 |
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110.68KB |
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FM25F005-TS-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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512K-bit serial flash memory with 64KB addressable blocks, supports SPI and dual I/O modes, operates at 2.3V to 3.6V, features 100MHz fast read, software/hardware write protection, 64-bit unique ID, and OTP security sector. |
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FM25F005-SO-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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512K-bit serial flash memory with 64K-byte organization, supporting SPI modes 0 and 3, featuring 100MHz fast read, 2.3V to 3.6V supply voltage, software and hardware write protection, and 64-bit unique ID. |
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FM25F01-DN-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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1M-bit Serial Flash memory with 128K-byte capacity, supporting SPI, Dual Output, and Dual I/O; features 256-byte page programming, sector/block erase, software/hardware write protection, and 64-bit unique ID. |
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FM25F01-TS-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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1M-bit serial flash memory with 2.3V to 3.6V supply, supports standard and dual SPI modes, features 256-byte pages, 4KB sectors, and includes software and hardware write protection, unique ID, and low power operation. |
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FM25F01-SO-U-G
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Shanghai Fudan Microelectronics Group Co Limited
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1M-bit serial flash memory with 2.3V to 3.6V supply, supports standard and dual SPI modes, features 256-byte pages, 4KB sectors, and includes software and hardware write protection, unique ID, and low power operation. |
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FM25F04A-SO-T-G
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Shanghai Fudan Microelectronics Group Co Limited
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4M-bit serial flash memory with 2.3V to 3.6V supply, supports SPI and Dual I/O modes, 128 sectors of 4KB each, 256-byte page programming, and features write protection, 64-bit unique ID, and high reliability with 100K program/erase cycles. |
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FM25F005-TS-T-G
