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20N50
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
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20N50C1
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
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20N50C1D
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
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20N50C1D
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
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20N50E1
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
1 |
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20N50E1D
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Unknown
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Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. |
Historical |
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37.63KB |
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20N50A
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AK Semiconductor
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20A500V N-channel enhancement mode MOSFET with 20A continuous drain current, 500V drain-source voltage, 0.21 ohm typical on-resistance at 10V gate-source voltage, and low gate charge, available in TO-220F, TO-247, and TO-247S packages. |
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SLP_F20N50S
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Maplesemi
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20A, 500V N-channel MOSFET with 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 37W power dissipation in TO-220 package. |
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SLH_W20N50S
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Maplesemi
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500V N-Channel MOSFET with 20A continuous drain current, 185mΩ RDS(on) at VGS = 10V, low gate charge of 40nC, and 250W power dissipation capability in TO-247 or TO-3P package. |
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SLF20N50S
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Maplesemi
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500V N-channel MOSFET with 20A continuous drain current, 185mΩ typical RDS(on) at VGS = 10V, low gate charge of 40nC, and fast switching performance for high-efficiency power applications. |
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SLF20N50C
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Maplesemi
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500V N-channel MOSFET with 20A continuous drain current, 200mΩ typical RDS(on) at VGS=10V, low gate charge of 90nC, and 33pF Crss, suitable for high-efficiency switching power conversion applications. |
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MDD20N50F
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Microdiode Semiconductor
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500V N-Channel Enhancement Mode MOSFET, VDS 500V, ID(Tc=25°C) 20A, RDS(on),max 0.29Ω@VGS=10V, Qg,typ 50.5nC, TO-220F-3L. |
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20N50A
