AKP0112AS
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 100V VDS, 12A ID, 9.9mΩ RDS(on) at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification in DC/DC converters. |
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CBMG712AS16
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COREBAI
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Monolithic CMOS analog switch with four SPST switches, operating from 1.8V to 5.5V supply, featuring low on-resistance (4.5Ω max at 5V), fast switching (tON=16ns, tOFF=10ns), and high bandwidth (>200MHz), available in 16-lead TSSOP and SOP packages. |
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SA12AS
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Jiangsu JieJie Microelectronics Co Ltd
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500W transient voltage suppressor for AC line protection and high power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 5V to 100V, low clamping voltage, and 10/1000 μs pulse rating.500W transient voltage suppressor for AC line and high power DC bus protection, available in uni-directional and bi-directional types with stand-off voltages from 5V to 100V, low clamping voltage, and 10/1000 μs pulse rating. |
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AK6012AS
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AK Semiconductor
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AK6012AS N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 12A continuous drain current, and low RDS(ON) of 8.5mΩ typical at VGS=10V, suitable for power switching and load switch applications. |
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P4SMA12AS
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Jiangsu JieJie Microelectronics Co Ltd
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400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package with peak pulse power of 400W at 10/1000 μs waveform, low clamping voltage, and standoff voltages ranging from 5.8V to 120V, suitable for surface mount applications.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and high ESD protection up to ±30kV.400W P4SMAxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications requiring ESD protection up to ±30kV.400W transient voltage suppressor diode in SMA package, designed for surface mount applications, featuring low profile, excellent clamping capability, and high peak pulse power handling at 10/1000 μs waveform. |
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SMAJ12AS
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Jiangsu JieJie Microelectronics Co Ltd
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400W SMAJxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high peak pulse power capability at 10/1000 μs waveform, designed for surface mount applications with excellent clamping performance.400W SMAJxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high surge capability with 400W peak pulse power at 10/1000 μs waveform, suitable for surface mount applications.400W SMAJxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, and high peak pulse power capability at 10/1000 μs waveform, designed for surface mount applications with excellent clamping performance.400W SMAJxx(C)AS Series transient voltage suppressor diodes in SMA package offer low profile, low inductance, 400W peak pulse power at 10/1000 μs waveform, excellent clamping capability, and fast response time below 1.0ps. |
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BP5212AS
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Bright Power Semiconductor Co Ltd
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BP5212AS is a dual-channel power management IC with RS2, RS1, S2, S1, and CN control pins, designed for battery protection applications featuring overcharge and over-discharge protection functions. |
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P6KE12AS
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Jiangsu JieJie Microelectronics Co Ltd
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600W transient voltage suppressor in DO-15 package, designed for AC line protection and high power DC bus clamping, available in uni-directional and bi-directional types with stand-off voltages from 6.8V to 120V.600W P6KExx(C)AS series transient voltage suppressors offer uni/bi-directional protection from 6.8V to 120V with low clamping voltage, 10/1000 μs waveform rating, and plastic DO-15 package rated 94V-0 for flammability. |
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P4KE12AS
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Jiangsu JieJie Microelectronics Co Ltd
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400W transient voltage suppressors in DO-41 package, available in unidirectional and bidirectional types with standoff voltages from 5.8V to 102V, offering low clamping voltage and peak pulse power capability at 10/1000 μs waveform.400W P4KExx(C)AS series transient voltage suppressors offer unidirectional or bidirectional protection with clamping voltages from 6.8V to 120V, low surge resistance, fast response time, and 10/1000 μs pulse handling up to 400W in a DO-41 package.400W peak pulse power transient voltage suppressors in DO-41 package, available in unidirectional and bidirectional versions, with clamping voltages from 6.8V to 120V, low incremental surge resistance, and fast response time, suitable for AC line protection and high-power DC bus clamping applications.400W P4KExx(C)AS Series transient voltage suppressors offer uni/bi-directional protection from 6.8V to 120V with low clamping voltage, 400W peak pulse power at 10/1000 μs, and fast response time, suitable for AC line and high-power DC bus applications.400W P4KExx(C)AS Series transient voltage suppressors offer uni/bi-directional protection from 6.8V to 120V with low clamping voltage, 10/1000 μs pulse rating, and DO-41 package suitable for AC line and high power DC bus applications. |
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AKP1212AS
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AK Semiconductor
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AKP1212AS N-Channel Super Trench Power MOSFET with 120V drain-source voltage, 12A continuous drain current, 10.9mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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1.5KE12AS
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Jiangsu JieJie Microelectronics Co Ltd
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1.5KE series 1500W transient voltage suppressors for AC line protection and DC bus clamping, available in unidirectional and bidirectional types with standoff voltages from 6.8V to 120V, low clamping voltage, and high surge current capability.1.5KExx(C)AS Series high current uni/bi-directional transient voltage suppressors offer 1500W peak pulse power, 6.8V to 120V breakdown voltage, low clamping voltage, and fast response time in a DO-27 package.1500W transient voltage suppressor in DO-27 package, available in unidirectional and bidirectional types, with stand-off voltages from 6.8V to 120V, low clamping voltage, and 10/1000 μs pulse rating. |
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P6SMB12AS
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Jiangsu JieJie Microelectronics Co Ltd
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600W P6SMBxx(C)AS Series TVS diodes in SMB package offer low profile, low inductance, and excellent clamping capability with 10/1000 μs pulse rating, suitable for surface mount applications requiring ESD protection up to ±30kV.600W transient voltage suppressor diode in SMB package with 10/1000 μs waveform rating, available in unidirectional and bidirectional types, featuring low leakage current, fast response time, and high surge current capability.600W transient voltage suppressor diode in SMB package, designed for surface mount applications, featuring low leakage current, fast response time, high peak pulse power capability, and protection against ESD up to ±30kV.600W transient voltage suppressor diode in SMB package with 10/1000 μs waveform rating, low leakage current, fast response time, and standoff voltages from 5.8V to 102V, designed for surface mount applications. |
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NCE6012AS
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NCEPOWER
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NCE6012AS is a 60V, 12A N-channel enhancement mode power MOSFET with advanced trench technology, offering low RDS(ON) of 6.5 mΩ at VGS = 10V and low gate charge for efficient switching performance in power applications. |
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NCE60P12AS
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET NCE60P12AS with -60V drain-source voltage, -12A continuous drain current, and RDS(ON) less than 14mΩ at VGS=-10V, utilizing advanced trench technology for low on-resistance and high-density cell design. |
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SMCJ12AS
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Jiangsu JieJie Microelectronics Co Ltd
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1500W SMCJxx(C)AS Series transient voltage suppressor diodes in SMC package offer low profile, low inductance, 10/1000 μs pulse handling up to 1500W, and clamping voltages from 9.2V to 162V, suitable for surface mount applications requiring ESD and surge protection. |
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SMBJ12AS
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Jiangsu JieJie Microelectronics Co Ltd
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600W SMBJxx(C)AS Series transient voltage suppressor diodes in DO-214AA package offer low profile, low inductance, and high surge capability with 10/1000 μs pulse rating, suitable for surface mount applications requiring ESD protection up to ±30kV.600W SMBJxx(C)AS Series TVS diodes offer low profile surface mount packaging, 600W peak pulse power at 10/1000 μs, low inductance, excellent clamping, and high ESD protection up to ±30kV, suitable for transient voltage suppression in various applications.600W SMBJxx(C)AS Series transient voltage suppressor diodes in DO-214AA package offer low profile, low inductance, and high surge capability with peak pulse power up to 600W at 10/1000 μs waveform and fast response time below 1ps.600W SMBJxx(C)AS Series TVS diodes in DO-214AA package offer low profile, low inductance, and high surge capability with 10/1000 μs pulse rating, ideal for surface mount transient protection applications. |
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1.5SMC12AS
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Jiangsu JieJie Microelectronics Co Ltd
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1500W transient voltage suppressor diode in SMC package with 10/1000 μs pulse waveform capability, low profile, surface mount design, and standoff voltages ranging from 5.8V to 102V for unidirectional and bidirectional configurations.1500W Transient Voltage Suppressor diode in SMC package, featuring 10/1000 μs pulse waveform rating, low leakage current, fast response time, surface mount design, and standoff voltages from 5.8V to 102V.1500W Transient Voltage Suppressor diode in SMC package with 10/1000 μs pulse waveform capability, low leakage current, fast response time, and standoff voltages ranging from 5.8V to 102V for unidirectional and bidirectional configurations.1500W transient voltage suppressor diode in SMC package with 10/1000 μs waveform rating, low profile, surface mount design, and clamping capability for ESD protection up to ±30kV. |
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AK60P12AS
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK60P12AS with -60V drain-source voltage, -12A continuous drain current, RDS(ON) less than 14mΩ at VGS=-10V, and low gate charge for high efficiency switching applications. |
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AKP0112AS
