MS2H10120G1
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Maplesemi
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1200V silicon carbide diode with 10A continuous forward current, fast switching, low forward voltage of 1.5V to 3.0V, and high-temperature operation up to 175°C, suitable for power factor correction and motor drives. |
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MS2H32120G1
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Maplesemi
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1200V silicon carbide diode with 16A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSD02120G1
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Maplesemi
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1200V silicon carbide diode with 9.5A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MS2H40120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 53A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSB10120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 10A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for automotive and power applications. |
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RA46120G44GA
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JWD
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RA4 SERIES 1x4 TAB-DOWN ICMs are RoHS compliant, support up to 2.5/5G speed, feature 350 µH minimum OCL, and offer 1500Vrms isolation, suitable for CAT 5/6 UTP with peak wave solder rating of 260 °C. |
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RG16120G19GA
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JWD
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RG1 SERIES 1x1 TAB-UP ICMs for CAT 5/6 UTP cables, RoHS compliant, rated for 260°C peak wave solder, supports up to 10G speed, with insertion loss from -1.0dB to -3.0dB depending on model. |
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MSH20120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 20A continuous forward current, fast switching, high-frequency operation, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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SS120G
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Shikues Semiconductor
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Surface Mount Schottky Barrier Rectifier, VRRM 2040V, VRMS 1428V, IF(AV) 1.0A, Tj -55 ~ +125°C. |
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RA46120G51GA
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JWD
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1x4 TAB-down ICMs in RoHS compliant package, rated for 260°C peak wave solder, support CAT 5/6 UTP cables, with insertion loss of -1.0 dB and return loss of -10 dB across 1-100 MHz, suitable for 10/100/1000BASE-T applications. |
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MSB20120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 20A continuous forward current, high-speed switching, temperature-independent behavior, and positive temperature coefficient on VF, suitable for power factor correction and motor drives. |
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MSP16120G1
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Maplesemi
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1200V silicon carbide Schottky diode with 16A continuous forward current, 1.8V typical forward voltage at 15A and 25°C, and a positive temperature coefficient on VF, housed in a TO-220-2L package. |
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RA11120G02GA
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JWD
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RoHS compliant 1x1 tab-down ICMs for CAT 5/6 UTP cables, supporting 10/100/1000/2.5/5G speeds, with insertion loss from -1.0dB to -2.0dB, return loss up to -10dB, crosstalk and CMRR up to -30dB, PoE options up to 4PPoE 60W, and rated for 260°C peak wave solder temperature. |
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MS2H10120G1
