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10SN100M
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Sanyo Semiconductor
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SN Series - Miniaturized Capacitors |
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353.45KB |
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10SN10M
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Sanyo Semiconductor
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SN Series - Miniaturized Capacitors |
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353.45KB |
4 |
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10SN150M
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Sanyo Semiconductor
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SN Series - Miniaturized Capacitors |
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PDF
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353.45KB |
4 |
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10SN22M
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Sanyo Semiconductor
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SN Series - Miniaturized Capacitors |
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PDF
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353.45KB |
4 |
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10SN47M
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Sanyo Semiconductor
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SN Series - Miniaturized Capacitors |
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PDF
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353.45KB |
4 |
CJQ10SN15S
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JCET Group
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N-channel Power MOSFET in SOP8 package with 150V drain-source voltage, 10A continuous drain current, 40mΩ typical RDS(on) at 10V VGS, suitable for load switch and battery protection applications. |
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CJAC110SN10H
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JCET Group
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N-Channel Power MOSFET CJAC110SN10H with 100V drain-source voltage, 110A continuous drain current, 4.5mΩ typical RDS(on) at 10V VGS, housed in a PDFN5x6-8L package, utilizing shielded gate trench technology for low gate charge and high power density. |
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CJAC110SN10A
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JCET Group
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N-Channel Power MOSFET CJAC110SN10A with 100V drain-source voltage, 110A continuous drain current, 3.4mΩ typical RDS(on) at 10V VGS, shielded gate trench technology, low gate charge, and PDFN5×6-8L package for high power density and efficient heat dissipation. |
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CJAC110SN10L
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JCET Group
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N-Channel Power MOSFET CJAC110SN10L with 100V drain-source voltage, 110A continuous drain current, 4.3mΩ typical RDS(on) at 10V VGS, shielded gate trench technology, and PDFN5x6-8L package for high power density and efficient heat dissipation. |
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CJAC110SN10
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JCET Group
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N-Channel Power MOSFET CJAC110SN10 with 100V drain-source voltage, 110A continuous drain current, 4.3mΩ typical RDS(on) at 10V VGS, housed in a PDFN5x6-8L package for high power density and efficient heat dissipation. |
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PDF
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G15-10SN-150-1200
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Wenzhou Gangyuan Electronics Co Ltd
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Microswitch with operating temperature range -25°C to +125°C, rated 10A 125/250VAC, contact resistance ≤100mΩ, insulation resistance ≥100MΩ, dielectric strength 1000VAC 1min, mechanical life 100000 cycles. |
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