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090A
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Essentra Components
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TAPERED CAP - OD RANGE: 93.3 - 9 |
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4.78MB |
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09-0A00.0001
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EAO
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SYMBOL INSERTION TOOL |
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5.23MB |
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09-0A00.0002
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EAO
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LIN/CAN EVAULATION KIT |
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5.23MB |
48 |
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09-0A00.0005
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EAO
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KEYPAD & RCC ADAPTER CABLE FOR E |
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5.23MB |
48 |
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09-0A00.0006
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EAO
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KEYPAD & RCC ADAPTER CABLE FOR E |
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5.23MB |
48 |
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09-0A12.1111
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EAO
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SWITCH KEYPAD 6 KEY RGB ILLUM |
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1.69MB |
9 |
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09-0A22.1111
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EAO
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SWITCH KEYPAD 6 KEY RBG ILLUM |
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1.69MB |
9 |
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09-0A72.3132
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EAO
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SWITCH KEYPAD 6 KEY RED ILLUM |
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1.69MB |
9 |
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09-0A72.3142
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EAO
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SWITCH KEYPAD 6 KEY RED ILLUM |
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1.69MB |
9 |
CWS60R090AZ
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Wuhan Xinyuan Semiconductor Co Ltd
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600V N-Channel Super Junction MOSFET CWS60R090A with 90 mΩ RDS(on), 40A continuous drain current, low gate charge, and fast switching for high-efficiency power applications. |
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NCEAP6090AGU
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NCEPOWER
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NCE AP6090AGU is an Automotive N-Channel Super Trench Power MOSFET with 60V VDS, 130A ID, 2.8mΩ RDS(on) at VGS = 10V, and low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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AKP6090AK
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AK Semiconductor
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N-Channel Super Trench Power MOSFET with 60V VDS, 90A ID, RDS(ON) less than 8.0mΩ at VGS=10V, low gate charge, suitable for high-frequency switching and synchronous rectification applications. |
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2R090A-6S
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SUNMATE electronic Co., LTD
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2RXX-6S series gas discharge tube with 2 electrodes, SMD lead type, dimensions 4.2mm x 6.0mm, DC spark-over voltage 75 to 3000V, low capacitance below 1pF, high insulation resistance, and impulse discharge current up to 8kA. |
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CWS60R090AF
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Wuhan Xinyuan Semiconductor Co Ltd
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600V N-Channel Super Junction MOSFET CWS60R090A with 90 mΩ RDS(on), 40A continuous drain current, low gate charge, and fast switching for high-efficiency power applications. |
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3R090A-5S
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SUNMATE electronic Co., LTD
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3RA-5S series surface mount gas discharge tube with 3 electrodes, 7.2 mm x 5.0 mm size, DC spark-over voltage 75–1100 V, impulse discharge current up to 15 kA, low capacitance of 2 pF, and high insulation resistance of 1 GΩ. |
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NCEAP4090AGU
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NCEPOWER
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NCEAP4090AGU is an N-channel Super Trench power MOSFET with 40V drain-source voltage, 125A continuous drain current, 2.9mΩ typical RDS(ON) at VGS=10V, suitable for high-frequency switching and synchronous rectification applications. |
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CWS60R090AZ
