CW24C04AT
|
|
Wuhan Xinyuan Semiconductor Co Ltd
|
2K/4K/8K-bit serial I²C bus EEPROM with 1.7V to 5.5V supply voltage, available in 256x8, 512x8, and 1024x8 organization, supporting 400kHz at 1.7V and 1MHz at higher voltages, featuring 8-byte or 16-byte page write modes. |
Original |
PDF
|
|
|
|
VS4604AT
|
|
VANGUARD
|
40V/150A N-Channel Advanced Power MOSFET with low on-resistance of 2.6 mOhm at VGS=10V, TO-220AB package, suitable for high-efficiency power applications. |
Original |
PDF
|
|
|
|
JMSH1504ATLQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
150V 3.3mΩ N-channel PowerJE®10x12 TOLL MOSFET with continuous drain current of 227A at 25°C, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
|
YP160804-ATC4
|
|
CT Micro International Corporation
|
SMD Type Yellow Emitter YP1608 04-ATC4 in 0603 package, AlGaInP LED with dominant wavelength 585.5 to 594.5 nm, luminous intensity 57 to 180 mcd at 20 mA, viewing angle ±60 degrees, forward voltage 1.75 to 2.35 V. |
Original |
PDF
|
|
|
|
AP160804-ATC4
|
|
CT Micro International Corporation
|
SMD Type Amber Emitter in 0603 package, featuring a dominant wavelength of 609 nm, luminous intensity from 45 to 180 mcd at 20 mA, viewing angle of ±60 degrees, and forward voltage of 1.75 to 2.35 V. |
Original |
PDF
|
|
|
|
BRP161504-ATC2
|
|
CT Micro International Corporation
|
Dual wavelength SMD LED emitter in 1615 package with blue (470 nm) and red (624 nm) dominant wavelengths, ±65 degree viewing angle, 25 mA continuous forward current, and compatibility with infrared and vapor phase reflow processes. |
Original |
PDF
|
|
|
|
GAP161504-ATC2
|
|
CT Micro International Corporation
|
Dual Wavelength SMD Type Emitter in 1615 package with dominant wavelengths of 520 nm (Green) and 605 nm (Amber), ±65 degree viewing angle, 25 mA continuous forward current, and compatibility with infrared and vapor phase reflow processes. |
Original |
PDF
|
|
|
|
JMSH1504ATL
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
150 V, 263 A N-channel TOLL Power MOSFET in PowerJE®10x12 package with 3.3 mΩ typical RDS(ON) at 10 V VGS, designed for power management and motor driving applications. |
Original |
PDF
|
|
|
|
VS3604AT
|
|
VANGUARD
|
30V/180A N-Channel Advanced Power MOSFET with 2.1 mOhm RDS(on) at VGS=10V, TO-220AB package, designed for high-efficiency power applications requiring low on-resistance and high current capability. |
Original |
PDF
|
|
|
|
VS4604ATD
|
|
VANGUARD
|
40V/150A N-Channel Advanced Power MOSFET with RDS(on) of 2.6 mOhm at VGS=10V, TO-263 package, 100% avalanche tested, suitable for high-efficiency power applications. |
Original |
PDF
|
|
|
CW24C04AT
