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02NR
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JST Manufacturing
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Connector |
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02NR-E4K(LF)
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JST Manufacturing
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Rectangular Connectors - Free Hanging, Panel Mount, Connectors, Interconnects, CONN RECEPT IDC 2 POS BLK |
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02N10
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Shenzhen Heketai Electronics Co Ltd
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N-channel MOSFET HKT02N10 in SOT-23 package with 100 V drain-source voltage, 2 A continuous drain current, and low on-resistance of 280 mΩ at VGS = 10 V, suitable for low power DC-DC converters and load switch applications. |
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RF-Q30SARGB-02-N
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REFOND
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3.0mm x 3.0mm RGB LED with EMC package, featuring red, green, and blue chips, wide viewing angle, RoHS compliance, and suitable for SMT assembly, packaged 5000pcs per reel. |
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VSP002N03MS-G
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VANGUARD
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30V/150A N-Channel Advanced Power MOSFET with RDS(on) of 2.3 mΩ at VGS=10V, available in PDFN5x6 package, featuring low on-resistance and 100% avalanche testing capability. |
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JMSH1002NE
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel power MOSFET with 2.2 mΩ RDS(ON) at 10V VGS, 284A continuous drain current, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance. |
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NCE1102N
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NCEPOWER
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NCE1102N is an N-Channel Enhancement Mode Power MOSFET with 110V drain-source voltage, 2A continuous drain current, and low RDS(ON) of 218mΩ typical at VGS=10V, suitable for power switching and high-frequency applications. |
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EM02N08H
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ETEK
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VSE002N03MS-G
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VANGUARD
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30V/155A N-Channel Advanced Power MOSFET with RDS(on) of 1.4 mΩ at VGS=10V, 2.2 mΩ at VGS=4.5V, available in PDFN3333 package, featuring high efficiency, fast switching, and low on-resistance. |
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JMSH1002NS
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 274A, 3.2mΩ N-channel Power SGT MOSFET in TO-247-3L package with low gate charge, excellent RDS(ON), and 100% UIS tested for power management and load switch applications. |
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EM02N70M
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ETEK
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SK02N06E
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Shikues Semiconductor
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Logic Level Threshold, RDS(ON)=86mΩ @ VGS=10V, 60V N-Channel MOSFET, SOT-223. |
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JMSH1002NTL
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Jiangsu JieJie Microelectronics Co Ltd
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100V 2.0mΩ N-channel Power MOSFET in PowerJE10x12 package with 337A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power tools, e-vehicles, robotics, and power management applications. |
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VSP002N03MST-G
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VANGUARD
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30V/150A N-Channel Power MOSFET with 1.3 mΩ RDS(on) at VGS=10V, 2.0 mΩ at VGS=4.5V, 163A ID silicon-limited, PDFN5x6 package, 100% avalanche tested, suitable for high-efficiency switching applications. |
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JMSH1002NC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 2.2 mΩ RDS(ON) at 10V VGS, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, high continuous drain current of 284A, and junction temperature range from -55°C to 150°C. |
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CJU02N60M1
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JCET Group
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N-Channel Power MOSFET CJU02N60M1 in TO-252-2L package with 600V drain-source voltage, 2A continuous drain current, 2.7 ohm on-resistance at 10V gate-source voltage, suitable for high voltage switching applications. |
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NCE6602N
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NCEPOWER
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NCE6602N is a dual N- and P-channel enhancement mode power MOSFET in a SOT23-6L package, with 30V drain-source voltage rating, low on-resistance, and suitable for battery protection and switching applications. |
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CESD0402NC5VB
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CREATEK Microelectronics
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Bidirectional ESD protection diode in 0402 package with 60W peak pulse power, 5.0V reverse stand-off voltage, 15pF typical junction capacitance, and compliance with IEC 61000-4-2 ±25kV contact discharge. |
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CJU02N60
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JCET Group
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N-channel power MOSFET in TO-252-2L package with 600V drain-source voltage, 2A continuous drain current, 4.4 ohm on-state resistance at 10V gate-source voltage, and high switching speed for power switching and DC/DC converter applications. |
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LC0502N
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Leiditech
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LC0502N is a 4-line ultra low capacitance TVS diode array with 5V operating voltage, nA-level leakage, low clamping voltage, and protection compliant with IEC 61000-4-2 (±30kV air, ±25kV contact), EFT 40A, and lightning 5A standards. |
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02N10
