JMTG018N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 130A N-channel enhancement mode power MOSFET with RDS(on) less than 1.8mΩ at VGS=10V, advanced trench technology, low gate charge, and lead-free construction suitable for load switch, PWM, and power management applications. |
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JMTK018N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 190A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 2.6mΩ at VGS=10V and 4.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in TO-252-4R package. |
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NCEAP018N60AGU
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NCEPOWER
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NCEAP018N60AGU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 270 A continuous drain current, and low on-resistance of 1.4 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications. |
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NCEAP018N60GU
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NCEPOWER
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NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. |
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NCEAP018N85LL
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NCEPOWER
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NCEAP018N85LL is an Automotive N-Channel Super Trench II Power MOSFET with 85 V VDS, 330 A ID, 1.3 mΩ RDS(on) at VGS = 10 V, optimized for high-frequency switching and synchronous rectification. |
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JMTC018N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 190A N-channel enhancement mode power MOSFET with RDS(on) less than 2.7mΩ at VGS=10V, TO-220C package, designed for load switching, PWM, and power management applications. |
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JMTE018N03A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 190A, 1.9mΩ N-channel Power Trench MOSFET in TO-263-3L package with low RDS(ON), high current capability, and fast switching characteristics suitable for power management and load switch applications. |
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JMTG018N03A
