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    -018N Search Results

    -018N Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    LP5996SD-1018/NOPB
    Texas Instruments Dual Linear Regulator with 300mA and 150mA Outputs 10-WSON Visit Texas Instruments Buy

    -018N Datasheets (7)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    badge JMTK018N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 190A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 2.6mΩ at VGS=10V and 4.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in TO-252-4R package. Original PDF
    badge JMTG018N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 130A N-channel enhancement mode power MOSFET with RDS(on) less than 1.8mΩ at VGS=10V, advanced trench technology, low gate charge, and lead-free construction suitable for load switch, PWM, and power management applications. Original PDF
    badge NCEAP018N85LL
    NCEPOWER NCEAP018N85LL is an Automotive N-Channel Super Trench II Power MOSFET with 85 V VDS, 330 A ID, 1.3 mΩ RDS(on) at VGS = 10 V, optimized for high-frequency switching and synchronous rectification. Original PDF
    badge NCEAP018N60AGU
    NCEPOWER NCEAP018N60AGU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 270 A continuous drain current, and low on-resistance of 1.4 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications. Original PDF
    badge NCEAP018N60GU
    NCEPOWER NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. Original PDF
    badge JMTE018N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 190A, 1.9mΩ N-channel Power Trench MOSFET in TO-263-3L package with low RDS(ON), high current capability, and fast switching characteristics suitable for power management and load switch applications. Original PDF
    badge JMTC018N03A
    Jiangsu JieJie Microelectronics Co Ltd 30V, 190A N-channel enhancement mode power MOSFET with RDS(on) less than 2.7mΩ at VGS=10V, TO-220C package, designed for load switching, PWM, and power management applications. Original PDF
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    -018N Price and Stock

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    Infineon Technologies AG IQE018N06NM6CGSCATMA1

    TRENCH 40<-<100V
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    DigiKey IQE018N06NM6CGSCATMA1 Tape & Reel 5,410 6,000
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    Mouser Electronics IQE018N06NM6CGSCATMA1 1,259
    • 1 $3.12
    • 10 $2.03
    • 100 $1.40
    • 1000 $1.33
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    Infineon Technologies AG ISC018N08NM6ATMA1

    TRENCH 40<-<100V
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    DigiKey () ISC018N08NM6ATMA1 Tape & Reel 1,061 5,000
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    ISC018N08NM6ATMA1 Digi-Reel 1,061 1
    • 1 $4.44
    • 10 $2.92
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    ISC018N08NM6ATMA1 Cut Tape 1,061 1
    • 1 $4.70
    • 10 $3.09
    • 100 $2.18
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    Mouser Electronics ISC018N08NM6ATMA1 5,107
    • 1 $4.44
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    EBV Elektronik ISC018N08NM6ATMA1 53 Weeks 5,000
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    Infineon Technologies AG IPB018N10NM8ATMA1

    IPB018N10NM8ATMA1
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    DigiKey IPB018N10NM8ATMA1 Cut Tape 855 1
    • 1 $4.92
    • 10 $3.25
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    Mouser Electronics IPB018N10NM8ATMA1 551
    • 1 $4.92
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    • 1000 $1.77
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    EBV Elektronik IPB018N10NM8ATMA1 53 Weeks 1,000
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    Infineon Technologies AG IPB018N03LF2SATMA1

    IPB018N03LF2SATMA1
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    DigiKey () IPB018N03LF2SATMA1 Tape & Reel 797 800
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    IPB018N03LF2SATMA1 Digi-Reel 797 1
    • 1 $3.26
    • 10 $2.12
    • 100 $1.47
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    IPB018N03LF2SATMA1 Cut Tape 797 1
    • 1 $3.26
    • 10 $2.12
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    Mouser Electronics IPB018N03LF2SATMA1 737
    • 1 $3.26
    • 10 $2.12
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    • 1000 $1.08
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    Newark () IPB018N03LF2SATMA1 Cut Tape 790 1
    • 1 $3.05
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    IPB018N03LF2SATMA1 Tape & Reel 790 100
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    Rochester Electronics IPB018N03LF2SATMA1 372 1
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    KORATECH 018N0100B07440808N0001

    18N*100mm*1.0P*(4/4/8/8)*P7
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 018N0100B07440808N0001 Bulk 500 10
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