-018N Search Results
-018N Result Highlights (1)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| LP5996SD-1018/NOPB |
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Dual Linear Regulator with 300mA and 150mA Outputs 10-WSON |
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-018N Datasheets (7)
Select Manufacturer
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
JMTG018N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 130A N-channel enhancement mode power MOSFET with RDS(on) less than 1.8mΩ at VGS=10V, advanced trench technology, low gate charge, and lead-free construction suitable for load switch, PWM, and power management applications. | Original | ||||
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JMTK018N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 190A N-channel Enhancement Mode Power MOSFET with RDS(on) less than 2.6mΩ at VGS=10V and 4.2mΩ at VGS=4.5V, featuring advanced trench technology, low gate charge, and available in TO-252-4R package. | Original | ||||
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NCEAP018N85LL
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NCEPOWER | NCEAP018N85LL is an Automotive N-Channel Super Trench II Power MOSFET with 85 V VDS, 330 A ID, 1.3 mΩ RDS(on) at VGS = 10 V, optimized for high-frequency switching and synchronous rectification. | Original | ||||
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NCEAP018N60AGU
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NCEPOWER | NCEAP018N60AGU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 270 A continuous drain current, and low on-resistance of 1.4 mΩ typical at 10 V gate-source voltage, optimized for high-frequency switching applications. | Original | ||||
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NCEAP018N60GU
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NCEPOWER | NCEAP018N60GU is an automotive-grade N-channel Super Trench II power MOSFET with 60 V drain-source voltage, 256 A continuous drain current, 1.6 mΩ typical RDS(ON) at 10 V VGS, and 175 °C maximum operating temperature, suitable for high-frequency switching and synchronous rectification applications. | Original | ||||
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JMTE018N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 190A, 1.9mΩ N-channel Power Trench MOSFET in TO-263-3L package with low RDS(ON), high current capability, and fast switching characteristics suitable for power management and load switch applications. | Original | ||||
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JMTC018N03A
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Jiangsu JieJie Microelectronics Co Ltd | 30V, 190A N-channel enhancement mode power MOSFET with RDS(on) less than 2.7mΩ at VGS=10V, TO-220C package, designed for load switching, PWM, and power management applications. | Original |
-018N Price and Stock
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Infineon Technologies AG ISC018N08NM6ATMA1- Tape and Reel (Alt: ISC018N08NM6ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ISC018N08NM6ATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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ISC018N08NM6ATMA1 | 53 Weeks | 5,000 |
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Infineon Technologies AG BSZ018N04LS6ATMA1Power MOSFET, N Channel, 40 V, 158 A, 1.8 Milliohms, TSDSON-FL, 8 Pins, Surface Mount - Tape and Reel (Alt: BSZ018N04LS6ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BSZ018N04LS6ATMA1 | Tape & Reel | 5,000 | 52 Weeks | 5,000 |
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BSZ018N04LS6ATMA1 | Cut Tape | 4,976 | 1 |
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| BSZ018N04LS6ATMA1 | Tape & Reel | 4,976 | 100 |
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BSZ018N04LS6ATMA1 | 475 | 1 |
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BSZ018N04LS6ATMA1 | 53 Weeks | 5,000 |
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Infineon Technologies AG IPB018N10N5ATMA1- Tape and Reel (Alt: IPB018N10N5ATMA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB018N10N5ATMA1 | Tape & Reel | 1,000 | 1,000 |
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IPB018N10N5ATMA1 | 20,798 | 1 |
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Vishay Intertechnologies SIHG018N60E-GE3Transistor MOSFET N-CH 600V 99A 3-Pin TO-247AC T/R - Tape and Reel (Alt: SIHG018N60E-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG018N60E-GE3 | Tape & Reel | 500 | 45 Weeks | 500 |
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SIHG018N60E-GE3 | 275 | 1 |
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Infineon Technologies AG IPP018N10N5AKSA1- Rail/Tube (Alt: IPP018N10N5AKSA1) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPP018N10N5AKSA1 | Tube | 488 | 1 |
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