|
018A
|
|
Essentra Components
|
TAPERED CAP - OD RANGE: 14.7 - 1 |
Original |
PDF
|
4.78MB |
|
JMSH1018AC
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100 V N-Ch Power MOSFET with 15.5 mOhm RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 63 A continuous drain current, and 100% UIS tested reliability. |
Original |
PDF
|
|
|
|
JMSL1018AK
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100V N-Ch Power MOSFET in TO-252-3L package with 40A continuous drain current, 14.0mΩ typical RDS(ON) at VGS=10V, low gate charge, and 1.9Ω gate resistance, suitable for power management and motor driving applications. |
Original |
PDF
|
|
|
|
JMSL1018AP
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100 V N-Ch Power MOSFET in SOP-8L package with 15.8 mΩ typical RDS(ON) at VGS = 10V, 8A continuous drain current, and low gate charge for power management and switching applications. |
Original |
PDF
|
|
|
|
JMSL1018AKQ
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100V N-Ch Power MOSFET in TO-252-3L package with 15.0 mΩ typical RDS(ON) at VGS = 10V, 45 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
Original |
PDF
|
|
|
|
HSBA0018A
|
|
Huashuo Semiconductor
|
N-ch 100V Fast Switching MOSFET HSBA0018A features 18 mΩ RDS(ON), 55.6 A continuous drain current, advanced trench technology, low gate charge, and 100% EAS guaranteed for high-efficiency synchronous buck converter applications. |
Original |
PDF
|
|
|
|
HSH0018A
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 58A continuous drain current, 18mΩ typical RDS(ON), 27.6nC gate charge, suitable for synchronous buck converters, in TO263 package. |
Original |
PDF
|
|
|
|
HSU0018A
|
|
Huashuo Semiconductor
|
N-channel trench MOSFET with 100 V drain-source voltage, 45 A continuous drain current, 22 mΩ typical RDS(ON), and low gate charge, suitable for synchronous buck converters. |
Original |
PDF
|
|
|
|
NCE3018AS
|
|
NCEPOWER
|
NCE3018AS is an N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 18A continuous drain current, and low on-resistance of 7mΩ at VGS=10V, utilizing advanced trench technology for high efficiency in power switching applications. |
Original |
PDF
|
|
|
|
AK3018AS
|
|
AK Semiconductor
|
N-Channel Enhancement Mode Power MOSFET AK3018AS with 30V drain-source voltage, 18A continuous drain current, RDS(ON) less than 7mΩ at VGS=10V, and low gate charge for high efficiency power switching applications. |
Original |
PDF
|
|
|
|
HSP0018A
|
|
Huashuo Semiconductor
|
N-Ch 100V Fast Switching MOSFET with 16 mΩ RDS(ON), 58A continuous drain current, low gate charge, and high cell density trench technology for efficient power conversion in synchronous buck applications. |
Original |
PDF
|
|
|
|
JMSH1018AE
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
100 V N-Ch Power MOSFET with 15.5 mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge, 63 A continuous drain current, and 100% UIS tested reliability. |
Original |
PDF
|
|
|
JMSH1018AC
