JMSH2010PC
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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JMSL1010PU
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JMSL1010PU with 100 V drain-source voltage, 43 A continuous drain current, 7.2 mOhm typical RDS(ON) at 10 V gate-source voltage, and low gate charge for efficient power switching applications. |
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ULC052010P5A
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Leiditech
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Ultra Low Capacitance TVS Diode Array ULC052010P5A for 5V applications, featuring nA level leakage, low clamping voltage, 110W peak pulse power, and compliance with IEC 61000-4-2, -4-4, and -4-5 standards in a DFN2010P5 package. |
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SG50010P G
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JWD
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SG50002-1 G, SG50010T G, SG50010P G, SG50011 G, and SG50011P G are dual port SMD LAN transformers for 100/1000 Base-T Ethernet, featuring 350 uH inductance, 1500 V isolation, PoE ratings up to 90W, and operating temperatures from -40 to 85 C. |
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JMSH2010PTL
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Jiangsu JieJie Microelectronics Co Ltd
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200V 7.2mW N-Ch Power MOSFET in PowerJE10x12 package, with 119A continuous drain current, 10V gate threshold voltage, low gate charge, and ultra-low on-resistance for power management and switching applications. |
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JMSL1010PE
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Jiangsu JieJie Microelectronics Co Ltd
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100V 6.3mW N-Ch Power MOSFET in TO-263-3L package with 112A continuous drain current, ultra-low RDS(ON), low gate charge, and 100% UIS tested for motor driving, power management, and switching applications. |
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JMSH2010PS
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 122A N-channel Power MOSFET in TO-247-3L package with 8.0mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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JMSH2010PE
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Jiangsu JieJie Microelectronics Co Ltd
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200V, 135A N-channel Power MOSFET with 7.6mΩ RDS(ON) at VGS = 10V, available in TO-220-3L and TO-263-3L packages, featuring low gate charge and ultra-low on-resistance for power management and switching applications. |
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ULC052010P5
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Leiditech
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Ultra Low Capacitance TVS Diode Array ULC052010P5 with 5V operating voltage, nA level leakage, low clamping voltage, 75W peak pulse power, and compliance with IEC 61000-4-2, -4-4, -4-5 standards in DFN2010P5 package. |
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JMSL1010PK
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Jiangsu JieJie Microelectronics Co Ltd
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100V, 80A, 6.4mΩ N-channel Power SGT MOSFET in TO-252-3L package with low gate charge, 100% UIS tested, suitable for load switch and power management applications. |
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JMSH2010PC
