AW93001LDNR
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Shanghai Awinic Technology
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A Low Power One-key Capacitor Touch Sensor |
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CT401L-600T
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JCET Group
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SOT-23-3LK packaged TRIAC with NPNPN 5-layer structure, 600V or 800V repetitive peak off-state voltage, 1A RMS on-state current, and high junction temperature up to 150°C. |
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GD30BC2501LR
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GigaDevice Semiconductor (Beijing) Inc
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Low quiescent current charger IC for 4/6 cell Li-ion packs. 5A, 90% efficiency, +/-1% regulation, 32V input. Peak-current-mode, CC/CV, QFN16 (4mmx4mm). |
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LT89101L
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Lontium Semiconductor
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MIPI-to-LVDS Level Shifter |
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FR101L
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Shenzhen Heketai Electronics Co Ltd
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Fast recovery diode in SOD-123FL package with repetitive peak reverse voltage from 50V to 1000V, low forward voltage of 1.3V at 1.0A, reverse leakage current up to 5μA, and reverse recovery time of 250ns. |
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MMBT5401L
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JCET Group
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PNP transistor in SOT-23 package, complementary to MMBT5551, with -160V collector-base voltage, -150V collector-emitter voltage, -0.6A collector current, and 0.3W power dissipation. |
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1N4001L
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Shenzhen Heketai Electronics Co Ltd
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Surface mount general purpose rectifier diode with 1 A average forward current, 30 A peak surge current, reverse voltage ratings from 50 to 1000 V, low forward voltage drop, and glass passivated junction in SOD-123FL package. |
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ESD0301L
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Microdiode Semiconductor
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IEC61000-4-2 ±15kV (air), ±8kV (contact), IEC61000-4-4 40A (5/50ns), DFN1006, UL 94V-0, tape and reel. |
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NUP1301LM
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Leiditech
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Low Capacitance TVS Diode Array NUP1301LM in SOT-23 package, designed for ESD protection with 100V operating voltage, 110V breakdown voltage, and low clamping voltage, suitable for RF, NFC, FM antenna, LVDS, and digital lines. |
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AW93001LDNR
