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01BZA8
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Toshiba
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DIODES (DIODES FOR PROTECTING AGAINST ESD) |
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90.48KB |
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01BZA8.2
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Toshiba
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Epitaxial planar type diode for protecting against ESD |
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90.49KB |
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01BZA8.2
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Toshiba
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Epitaxial planar type diode for protecting against ESD |
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119.07KB |
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KP523201B/08B
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Kiwi Instruments
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采用 SOT23-6 封装的 4.5V 至 17V 输入、3A 输出、600kHz 同步降压转换器 KP523201B/08B 是一种简单易用、高效集成的同步降压转换器。它具有 4.5V 到 17V 的宽输入电压范围，非常适合于 12V 和 15V 等各种常见的输入电压轨。它支持高达 3A 的持续输出电流，输出电压范围为 0.6V 至 7V。 KP523201B 轻载工作在脉冲频率调制模式 (PFM) 下以维持高轻载效率；KP523208B 工作在强制脉宽调制模式 (FPWM) 下以实现全负载电流下固定的开关频率和低输出纹波。 KP523201B/08B 集成了完善的保护功能，包括输入欠压保护 (UVLO)，逐周期谷底限流保护 (OCL)，输出欠压打嗝保护 (UVP)，输出过压保护 (OVP) 和过温保护 (OTP)，以确保其在不同的工作条件下保持安全、可靠运行。 KP523201B/08B 采用小尺寸的 SOT23-6 封装，工作结温范围为 -40℃ 到 125℃。 |
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KAN0661-0501B
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Wenzhou Gangyuan Electronics Co Ltd
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Tactile switch KAN0661-0501B with operating force 160±50gf, travel 0.25±0.1mm, DC12V 50mA rating, operating temperature -30°C to 80°C, and storage temperature -40°C to 90°C. |
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ESD0501BL
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Shikues Semiconductor
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Transient protection for high-speed data lines, IEC 61000-4-2 ±15kV (Air), ±8kV (Contact), IEC 61000-4-4 40A (5/50 ns), CDE, ultra-small package (1.0mm×0.6mm×0.5mm), low capacitance: 0.5pF, SOD-882, UL 94V-0, Tape and Reel. |
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AW8601BCSR
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Shanghai Awinic Technology
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10-bit DAC Bi-directional ±100mA H-Bridge Driver |
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LPM3401B3F
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LowPowerSemi
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P-channel enhancement mode field effect transistor with -15V drain-source voltage, -4A continuous drain current, and RDS(ON) of 58mΩ typical at VGS=-10V, available in SOT23 package. |
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CJ15-16000C01BT02-D006
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JCET Group
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SMD2520 4-pad surface mount crystal resonator with a nominal frequency of 16.000MHz, load capacitance of 8pF, frequency tolerance ±10ppm, operating temperature range -40 to +85°C, and fundamental mode oscillation. |
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DIO7301B
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Dioo Microcircuits Co Ltd
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5.5V rated 2A load switch with 48mΩ N-MOSFET, 1.8V to 5.5V operation, soft-start control, reverse current blocking, and up to 5A peak current capability in SOT23-5 package. |
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3DD13001B(RANGE:23-26)
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JCET Group
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NPN transistor in TO-92 package for power switching, with 420V collector-emitter voltage, 0.2A continuous collector current, 0.75W power dissipation, and hFE ranging from 14 to 29. |
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KAN0631N-0601B-38
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Wenzhou Gangyuan Electronics Co Ltd
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Light touch switch with 6x6 mm base, 6.0 mm height, black stem, operating force 1.6 N, rated for DC 12 V 50 mA, operating temperature -20°C to 70°C, and IP67 protection. |
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KAN0637-0701B
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Wenzhou Gangyuan Electronics Co Ltd
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Tactile switch with mechanical contact, model KAN0637-0701B, operating force 160±50gf, travel 0.25±0.1mm, rated DC12V 50mA, operating temperature -30°C to 80°C, IP67 rated. |
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TPA8801B
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3peak Incorporated
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High Sensitivity Current Input Interface |
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SMF201B
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SUNMATE electronic Co., LTD
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Surface mount fast recovery rectifier diodes in SMB/DO-214AA package, 50 to 1000V peak reverse voltage, 2.0A average rectified current, low forward voltage drop, glass passivated junction, operating temperature from -50 to +150°C. |
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CD4001BM
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SLKOR
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ESD0501BU
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Shikues Semiconductor
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Ultra Low Capacitance ESD Protection Diode, 0.25pF, DFN1006, IEC 61000-4-2, ±8kV contact, ±15kV air discharge. |
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AK2301B
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK2301B with -20V drain-source voltage, -2.6A continuous drain current, RDS(ON) less than 160mΩ at VGS=-2.5V, low gate charge, and 1.8V gate drive capability, housed in SOT-23 surface mount package. |
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JMTL3401B
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Jiangsu JieJie Microelectronics Co Ltd
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P-channel Enhancement Mode Power MOSFET JMTL3401B with -30V drain-source voltage, -4A continuous drain current, and low RDS(ON) of 62mΩ at VGS = -10V, available in SOT-23 package. |
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AK3401BY
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AK Semiconductor
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P-Channel Enhancement Mode Power MOSFET AK3401BY with -30V drain-source voltage, -4.4A continuous drain current, and low on-resistance of 45mΩ at VGS=-10V, suitable for load switch and PWM applications in SOT-23-3L surface mount package. |
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KP523201B/08B
