-01-H Search Results
-01-H Datasheets (22)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AK01H13WD
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H13WD with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.2mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H13D
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AK Semiconductor | AK01H13D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and 6.8mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H10
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AK Semiconductor | AK01H10 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 13mΩ maximum RDS(ON) at 10V VGS, featuring high ESD capability and optimized for power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H14D
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AK Semiconductor | AK01H14D N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 5.5mΩ at VGS=10V, and high ESD capability in a TO-263-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H11
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H11 with 100V drain-source voltage, 110A continuous drain current, and 7.5mΩ typical RDS(ON) at 10V VGS, featuring advanced trench technology for low gate charge and high switching efficiency. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE01H13D
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NCEPOWER | NCE01H13D is an N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H29T
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H29T with 100V VDSS, 290A ID, and RDS(ON) of 2.4mΩ typical at VGS=10V, featuring high density cell design for low on-resistance and optimized performance in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H13
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 130A continuous drain current, and low on-resistance of 5.3mΩ typical at 10V gate-source voltage, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE01H11
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NCEPOWER | NCE01H11 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 110A continuous drain current, 6.8mΩ typical RDS(ON) at VGS=10V, and advanced trench technology for low gate charge and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H21TC
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET with 100V VDSS, 210A ID, and 3.3mΩ typical RDS(ON) at VGS=10V, utilizing trench technology for low on-resistance and high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AW93001HDNR
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Shanghai Awinic Technology | A Low Power One-key Capacitor Touch Sensor | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H14C
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H14C with 100V drain-source voltage, 140A continuous drain current, RDS(ON) less than 6.0mΩ at VGS=10V, advanced trench technology, low gate charge, and high ESD capability. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H10D
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 100A continuous drain current, and 9.9mΩ typical RDS(ON) at 10V VGS, featuring high ESD capability and low gate charge in a TO-263-2L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE01H10
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NCEPOWER | NCE01H10 is an N-channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and ultralow RDS(ON) of 9.9mΩ typical at VGS=10V, designed for high-efficiency power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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AD-MMBT5401-H
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JCET Group | PNP plastic-encapsulated transistor in SOT-23 package, with collector-base voltage of -160 V, collector-emitter voltage of -150 V, continuous collector current of -0.6 A, and power dissipation of 0.3 W, suitable for medium power amplification and switching. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H14T
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H14T with 100V drain-source voltage, 140A continuous drain current, and 4.5mΩ typical RDS(ON) at 10V VGS, designed for high-frequency switching and power applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H29TC
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H29TC with 100V VDSS, 290A ID, and RDS(ON) of 2.7mΩ at VGS=10V, featuring high cell density design for low on-resistance and optimized performance in motor drives and power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H16
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AK Semiconductor | N-Channel Enhancement Mode Power MOSFET AK01H16 with 100V drain-source voltage, 160A continuous drain current, and 3.8mΩ typical RDS(ON) at 10V VGS, featuring low gate charge and high ESD capability in a TO-220-3L package. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NCE01H10D
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NCEPOWER | NCE01H10D is a channel enhancement mode power MOSFET with 100V drain-source voltage, 100A continuous drain current, and low on-state resistance of 9.9mΩ typical at VGS=10V, featuring advanced trench technology for high efficiency in power switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AK01H14
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AK Semiconductor | AK01H14 N-Channel Enhancement Mode Power MOSFET with 100V drain-source voltage, 140A continuous drain current, and 4.6mΩ typical RDS(ON) at 10V VGS, suitable for high-frequency switching applications. | Original | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
-01-H Price and Stock
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Abracon Corporation AIMC-Q0201HQ-1N0B-TFIXED IND 1NH 750MA 100 MOHM SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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AIMC-Q0201HQ-1N0B-T | Digi-Reel | 14,330 | 1 |
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Buy Now | |||||
| AIMC-Q0201HQ-1N0B-T | Cut Tape | 14,330 | 1 |
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Buy Now | ||||||
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AIMC-Q0201HQ-1N0B-T | Tape & Reel | 18 Weeks | 15,000 |
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Get Quote | |||||
Analog Devices Inc LTC6101HVCIS5-TRMPBFIC CURR SENSE 1 CIRCUIT TSOT23-5 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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LTC6101HVCIS5-TRMPBF | Digi-Reel | 2,413 | 1 |
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Buy Now | |||||
| LTC6101HVCIS5-TRMPBF | Cut Tape | 2,413 | 1 |
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Buy Now | ||||||
| LTC6101HVCIS5-TRMPBF | Tape & Reel | 2,000 | 500 |
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Buy Now | ||||||
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LTC6101HVCIS5-TRMPBF | 8,012 |
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Get Quote | |||||||
TDK Corporation FA18NP01H472JNU06CAP CER 4700PF 50V NP0 RADIAL |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FA18NP01H472JNU06 | Cut Tape | 1,850 | 1 |
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Buy Now | |||||
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FA18NP01H472JNU06 | 29 Weeks | 4,000 |
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Get Quote | ||||||
Radiocrafts AS RC1701HP-RC232RF TXRX MOD ISM < 1GHZ CAST SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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RC1701HP-RC232 | Cut Tape | 1,447 | 1 |
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Buy Now | |||||
Samtec Inc IPL1-102-01-H-S-KCONN HEADER VERT 2POS 2.54MM |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPL1-102-01-H-S-K | Tube | 92 | 1 |
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Buy Now | |||||
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IPL1-102-01-H-S-K |
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Buy Now | ||||||||