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004A
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Essentra Components
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TAPERED CAP - OD RANGE: 5.3 - 7 |
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JMTK4004A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 120A N-channel enhancement mode power MOSFET in TO-252 package with RDS(on) less than 4.3mΩ at VGS=10V, featuring low gate charge and suitable for load switch, PWM, and power management applications. |
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JMSH1004AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V 3.0mW N-channel Power MOSFET with 190A continuous drain current, low gate charge, and ultra-low RDS(ON), suitable for power management, DC/DC and AC/DC switching, motor driving in power tools, e-vehicles, and robotics applications. |
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JMSH1004AEQ
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JMSH1004AEQ with 100 V drain-source voltage, 3.0 mΩ typical RDS(ON) at 10 V VGS, 216 A continuous drain current, and TO-263-3L package, suitable for high-efficiency power applications. |
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CJS9004A
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JCET Group
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Dual N-Channel MOSFET in TSSOP8 package with 20V drain-source voltage, 10A continuous drain current, and low on-resistance of 8.5mΩ at 4.5V gate-source voltage, suitable for load switch applications. |
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CBM2004AS16
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COREBAI
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Seven-channel Darlington transistor array with 500 mA rated collector current per channel, 50 V high-voltage outputs, integrated clamp diodes, and 10.5 kΩ base resistors for direct logic interface. |
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JMTC4004A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 120A N-channel enhancement mode power MOSFET with RDS(on) less than 4.5 mOhm at VGS = 10V, advanced trench technology, low gate charge, suitable for load switch, PWM and power management applications. |
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JMTG4004A
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Jiangsu JieJie Microelectronics Co Ltd
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40V, 100A N-channel enhancement mode power MOSFET with RDS(on) less than 3.5 mΩ at VGS = 10V, available in a lead-free PDFN5x6-8L package, designed for load switching, PWM, and power management applications. |
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JMSH1004AE
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JMSH1004AC with 100V drain-source voltage, 3.0mΩ RDS(ON) at 10V VGS, 190A continuous drain current, and low gate charge for high-efficiency power management applications. |
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JMTK3004A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 100A N-channel Enhancement Mode Power MOSFET with RDS(ON) less than 3.6mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and TO-252-3L package for power management and load switching applications. |
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SM4004A
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SUNMATE electronic Co., LTD
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Surface mount silicon rectifier diodes in SMA package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications.Surface mount silicon rectifier diodes in SMA package with 50 to 1000V reverse voltage range, 1.0A average forward current, low forward voltage drop, and operating temperature from -55 to +125°C.Surface mount silicon rectifier diodes with 50 to 1000V voltage range, 1.0A average forward current, low forward voltage drop, and SMA/DO-214AC package, suitable for surface mounted applications.Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0A average forward current, 50 to 1000V recurrent peak reverse voltage, low forward voltage drop, designed for surface mounted applications.Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications.Surface mount silicon rectifier diodes in SMA/DO-214AC package, 1.0 A average forward current, 50 to 1000 V peak reverse voltage, low forward voltage drop, designed for surface mounted applications.Surface mount silicon rectifier diodes in SMA package, 1.0 A average forward current, 50 to 1000 V repetitive peak reverse voltage, low forward voltage drop, designed for surface mounted applications. |
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JMTK4004A
